Status of HgCdTe photodiodes at the Military University of Technology

Kubiak, L.; Madejczyk, P.; Wenus, J.; Gawron, W.; Jóźwikowski, K.; Rutkowski, J.; Rogalski, A.

Artykuł - szczegóły

Tytuł artykułu

Status of HgCdTe photodiodes at the Military University of Technology

Autorzy

Kubiak L. , Madejczyk P. , Wenus J. , Gawron W. , Jóźwikowski K. , Rutkowski J. , Rogalski A.

Wybrane pełne teksty z tego czasopisma

http://journals.pan.pl/dlibra/journal/opelre

Identyfikatory

Warianty tytułu

Konferencja

The Fourth Scientific Symposium on Image Processing Technology. TPO 2002 ; (21.11-23.11.2002) ; Serock, Poland

Języki publikacji

Abstrakty

The paper presents technological achievements in fabrication of cryogenically-cooled and ambient temperature HgCdTe photodiodes carried out during the last four years at the Institute of Applied Physics, Military University of Technology. Because of the complicated and expensive fabrication process, numerical simulation has become a critical tool for the development of HgCdTe bandgap engineering devices. Therefore in the second part of the paper, an original interation scheme is used to predict the effect of composition and doping profiles on the heterojunction detector parameters. A novel tipping boat for liquid phase epitaxial (LPE) growth of HgCdTe from Te-rich solutions has been proposed. The successful fabrication of long wevelength infrared (LWIR) Hg1-yCdyTe/Hg1-xCdxTe heterostructures (y x) on semi-insulating (111)CdZnTe substrates is presented. The performance of p-on-n double-layer heterojunction (DLHJ) photodiodes at temperature 77 K is analysed. It is also shown that LPE can be used to realise advanced bandgap engineered multi-junction structures. The parameters and characteristics of the new type of HgCdTe buried photodiodes, operated at near-room temperature (T = 200-300 K) in LWIR spectral range, are reported. Finally, an effective numerical model for performance predictions of HgCdTe heterostructure device is presented. The model is used to analyse the performance of dual-band HgCdTe photovoltaic detector and mid wavelength infrared (MWIR) HgCdTe heterostructure device. In the last case, it is shown that excess 1/f noise of MWIR non-equilibrium heterostructure device is connected with fluctuation of carrier mobility.

Słowa kluczowe

liquid epitaxy HgCdTe photodiodes multi-junction photodiodes heterostructure photodiodes dual-band detectors

Wydawca

Stowarzyszenie Elektryków Polskich
Polska Akademia Nauk
Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego

Czasopismo

Opto-Electronics Review

Rocznik

2003

Tom

Vol. 11, No. 3

Strony

211--226

Opis fizyczny

Bibliogr. 43 poz., fot., rys., tab., wykr.

Twórcy

autor

Kubiak L.

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

autor

Madejczyk P.

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

autor

Wenus J.

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

autor

Gawron W.

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

autor

Jóźwikowski K.

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

autor

Rutkowski J.

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

autor

Rogalski A.

rogan@wat.edu .pl

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

Bibliografia

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Bibliografia

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