Multilayer strained Si/SiGe structures: fabrication problems, interface characteristics, and physical properties

• Autorzy: Orlov L. K. , Horvath Z. J. , Ivina N. L. , Vdovin V. I. , Steinman E. A. , Orlov M. L. , Romanov Y. A.
• Konferencja: Third International Conference on Solid State Crystals. Materials Science and Applications. ICSSC '2002 ; (14.10-18.10.2002 ; Zakopane, Poland)
• Języki publikacji: EN

Abstrakty

EN

The objectives of this investigation are structural and physical characteristics of the n-Si1–xGex/n(p)-Si heterojunction under strong elastic deformation of Si1–xGex layers which gives rise to misfit dislocations in the heteroboundary region; the factors playing the main role in formation of the band structure of the system; the use of transmission electron microscopy and optical methods for determination of the phenomena connected with misfit dislocations in the grown epitaxial structure; the electrical characteristics of diode structures and the process of electron-hole recombination via dislocation states in a heterojunction.

Słowa kluczowe

EN

heterojunction; silicon; solid solution; misfit dislocation; photoluminescence; electrical properties

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2003
• Tom: Vol. 11, No. 2
• Strony: 169--174
• Opis fizyczny: Bibliogr. 7 poz.

Twórcy

autor

Orlov L. K.

• Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia

autor

Horvath Z. J.

• Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Hungary

autor

Ivina N. L.

• Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia

autor

Vdovin V. I.

• Institute for Chemical Problems of Microelectronics, Moscow, Russia

autor

Steinman E. A.

• Institute of Solid State Physic, Russian Academy of Sciences, Chemogolovka, Russia

autor

Orlov M. L.

• Nizhny Novgorod State Lobachevsky University, Russia

autor

Romanov Y. A.

• Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia

Bibliografia

• 1. L.K. Orlov, V.A. Tolomasov, A.V. Potapov, Y.N. Drozdov, and V.I. Vdovin, "Heteroepitaxy of Ge-SiGe superlattices on Si (100) substrates by GeH4 - Si method", Proc. 9th Conf. on Semicond. and lnsulating Materials - SIMS 9, IEEE, SIMC-9, Toulouse, France, April-May, 92 (1996). IEEE, SIMC-9, Toulouse, France, 215-218 (1996).
• 2. L.K. Orlov, V.A. Tolomasov, A.V. Potapov, V.I. Vdovin, and M.G. Mil'vidskii, "Heteroepitaxy of SiGe layers and Ge-SiGe superlattices on Si (100) by GeH4 - Si MBE - method: growth kinetics and structural studies." Proc. 23rd Int. Symposium on Compound Semicond. ISCS-23, Inst. of Phys. Publishing, Bristol, Series Numb. 155, 205-208 Bristol (1997).
• 3. L.K. Orlov, S.V. Ivin, A.V. Potapov, and N.L. Ivina, "The peculiarities of a masstransfer in the hydride epitaxy of Si (Ge)/Si1-xGex structures in a condition of a nonstationary process", Technical Physics 71, 417-421 (2001).
• 4. L.K. Orlov and N.L. Ivina, "Role of suface segregation in formation of abrupt interfaces in Si/SiGe heterocompositions grown by molecular beam epitaxy with combined sources," Semiconductors 36, 191-196 (2002).
• 5. C. Van Opdorp and N.K.J. Kanerva, "Current-voltage characteristics and capacity of the isotypic heterojunction", Solid State Electron. 10, 401-406 (1967).
• 6. A.G. Milnes and D.L. Feucht, Heterojunctions ana Metal-Semiconductor Junctions, Chapter 4, Academic Press, New York and London, 1972.
• 7. O'Relly, "Valence band engineering in strained-layer structures", Semicond. Sci. Technol. 4, 121-137 (1989).