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New mid-infrared optical sources based on isotropic semiconductors (zinc selenide and gallium arsenide) using total internal reflection quasi-phase-matching

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Warianty tytułu
Konferencja
Third International Conference on Solid State Crystals. Materials Science and Applications. ICSSC '2002 ; (14.10-18.10.2002 ; Zakopane, Poland)
Języki publikacji
EN
Abstrakty
EN
The French aerospace agency is involved in the realization of compact solid-state coherent sources, such as optical parametric oscillators (OPO), using new materials, such as highly non-linearly efficient semiconductors (ZnSe, GaAs or InP). However, since these materials are optically isotropic, they require new phase-matching techniques. We report the quasi - phase matched difference frequency generation in isotropic semiconductors using total internal reflection. We made use of large Fresnel birefringence at reflection between the signal and idler wave outputs of an OPO. Large tunability (between 8 and 13 um) is demonstrated. Agreement between theoretical expectation and experimental results is excellent.
Twórcy
autor
  • ONERA/DMPH, Chemin de la Huniere, 91761 Palaiseau cedex, France
autor
  • ONERA/DMPH and UPMC, 4 Place Jussieu, 75005 Paris, France
autor
  • ONERA/DMPH, Chemin de la Huniere, 91761 Palaiseau cedex, France
autor
  • CNRS Bellevue, 1 place Aristide Briand, 92195 Meudon cedex, France
autor
  • CNRS Bellevue, 1 place Aristide Briand, 92195 Meudon cedex, France
Bibliografia
  • 1. See Special issue N° 6, "Laser Applications to chemical and environmental analysis", Appl. Opt. 40, 2001.
  • 2. E. Rosencher, "Towards integrated semiconductor optical parametric oscillators", CR. Acad. Sci. Paris, Serie IV, 615-625 (2000).
  • 3. E. Rosencher and B. Vinter, Optoelectronics, Cambridge University Press, New York, 2002.
  • 4. A. Fiore, V. Berger, E. Rosencher, P. Bravetti, and J. Nagle, "Phase matching using an isotropic nonlinear material", Nature 391, 463-466 (1998).
  • 5. E. Lallier, L. Becouam, M. Brévignon, and J. Lehoux, "Infrared difference frequency generation with quasi-phase-matched GaAs" Electron. Lett. 17, 212 (1998).
  • 6. L. Gordon, R.C. Eckardt, R.L. Byer, R.K. Route, and R.S. Feigel on, Ginzton Lab. Rep. 5133, Ginzton Laboratory, Stanford University, Stanford, Calif, 1992.
  • 7. J. Armstrong, N. Bloembergen, J. Ducuing, and P. Pershan, "Interactions between light waves in a nonlinear dielectric", Phys. Rev. 127, 1918-1939 (1962).
  • 8. G.D. Boyd and C.K.N. Patel, "Enhancement of optical second-harmonic generation by reflection phase matching in ZnS and gas", Appl. Phys. Lett. 8, 313-315 (1966).
  • 9. H. Komine, W.H. Long, J.W. Tully, and E.A. Stappaerts, "Quasi-phase-matched second-harmonic generation by use of a total-internal-reflection phase shift in gallium arsenide and zinc selenide plates", Optics Lett. 23, 661-663 (1998).
  • 10. M.V. Klein and T.E. Furtak, Optics (2nd edition), John Wiley, New York, 1998.
  • 11. R. Haïdar, A. Mustelier, Ph. Kupecek, E. Rosencher, P. Lemasson, R. Triboulet, and G. Mennerat, "Largely tunable mid-infrared (8-12 μrn) difference frequency generation in isotropic semiconductors", J. Appl. Phys. 91, 2550-2553 (2002).
  • 12. N. Forget, Rapport de stage de l'Ecole Polytechnique, ONERA, Palaiseau, 2001.
  • 13. H.H. Li, "Refractive index of ZnS, ZnSe, and ZnTe and its wavelength and temperature derivatives", J. Phys. Chem. Ref Data 13, 103-150 (1984).
  • 14. E. Rzepka, J.P. Roger, P. Lemasson, and R. Triboulet, "Optical transmission of ZnSe crystals grown by solid phase recrystallization", J. Cryst. Growth 197, 480-484 (1999).
  • 15. R. L. Sutherland, Handbook of Non-linear Optics, Dekker, New York, 1996.
  • 16. P .K. Tien, "Light waves in thin films and integrated optics", Appl. Opt. 10, 2395-2413 (1971).
  • 17. L.M. Liu, G. Lindauer, W.B. Alexander, and P.H. Holloway, "Surface preparation of ZnSe by chemical methods", J. Vac. Sci. Technol. B 13(6), 2238-2244 (1995).
  • 18. T. Yoshikawa, Y. Sugimoto, Y. Sakata, T. Takeuchi, M. Yamamoto, H. Hotta, S. Kohmoto, and K. Asakawa, "Smooth etching of various III/V and II/VI semiconductors by C12 reactive ion beam etching", J. Vac. Sci. Technol. B14, 1764-1772 (1996).
  • 19. S. Adashi, "GaAs, A1As, and A1xGa1-x As material parameters for use in research and device applications", J. Appl. Phys. 58, R1-R29 (1985).
  • 20. P. Kupecek, J.M. Weulersse, P. Isnard, M. Alexandre, and M. Clerc, "Dispositif constitué d'un oscillateur paramétrique optique et d' un convertisseur de fréquence et optimisé pour la photochimie isotopique de UF6 par laser", J. Optics (Paris) 14, N°1, 43-48 (1983).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA2-0007-0012
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