Conductivity anisotropy of CdHgTe MBE layers with a periodic surface microrelief

• Autorzy: Voitsekhovskii A. V. , Kokhanenko A. P. , Nesterovich N. V. , Varavin V. S. , Dvoretsky S. A. , Sidorov Y. G. , Mikhalov N. N.
• Konferencja: Third International Conference on Solid State Crystals. Materials Science and Applications. ICSSC '2002 ; (14.10-18.10.2002 ; Zakopane, Poland)
• Języki publikacji: EN

Abstrakty

EN

The surface microrelief of CdHgTe layers grown by molecular beam epitaxy (MBE) method has been studied by means of atomicforce microscopy. A periodic surface microrelief in the form of an ordered system of extended waves with the characteristic period 0.1-0.2 um has been detected on epilayers grown at increased temperatures. Angular dependencies of the conductivity at 77 K have been measured and the conductivity anisotropy has been detected with a minimum in the direction transverse to microrelief waves. A feature of the transmission spectrum and the spectrum change after film annealing are observed. It is assumed that walls growing in the direction from the substrate to the surface are formed under microrelief wave slopes. Such structure can cause the observed feature of the transmission spectrum if the adjacent walls have different composition. In this work a calculation of spectral characteristics taking into account the influence of variable gap composition and nonuniformity of the composition through the depth has been carried out.

Słowa kluczowe

EN

CdHgTe layers; MBE; surface microrelief; spectral characteristics

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2003
• Tom: Vol. 11, No. 2
• Strony: 151--154
• Opis fizyczny: Bibliogr. 2 poz.

Twórcy

autor

Voitsekhovskii A. V.

• Siberian Physico-Technical Institute, 1 Novosobornaya Ave., 634050 Tomsk, Russia

autor

Kokhanenko A. P.

• Siberian Physico-Technical Institute, 1 Novosobornaya Ave., 634050 Tomsk, Russia

autor

Nesterovich N. V.

• Siberian Physico-Technical Institute, 1 Novosobornaya Ave., 634050 Tomsk, Russia

autor

Varavin V. S.

• Institute of Semiconductor Physics, 13 Lavrientieva Av., 630090 Novosibirsk, Russia

autor

Dvoretsky S. A.

• Institute of Semiconductor Physics, 13 Lavrientieva Av., 630090 Novosibirsk, Russia

autor

Sidorov Y. G.

• Institute of Semiconductor Physics, 13 Lavrientieva Av., 630090 Novosibirsk, Russia

autor

Mikhalov N. N.

• Institute of Semiconductor Physics, 13 Lavrientieva Av., 630090 Novosibirsk, Russia

Bibliografia

• 1. Yu. G. Sidorov, S.A. Dvoretsky, N.N. Mikhailov, M.V. Yakushev, V.S. Varavin, V.V. Vasiliev, A.O. Suslyakov, and V.N. Ovsyuk, "MCT heterostructure designing and growing by MBE for IR devices", Proc. SPIE 4355, 228 (2001).
• 2. Y.H. Phang, C. Teichert, M.G. Lagally, L.J. Peticolos, J.C. Bean, and E. Kasper, Phys. Rev. B50, 14435 (1994).