Analysis of VLWIR HgCdTe photodiode performance

• Autorzy: Wenus J. , Rutkowski J. , Rogalski A.
• Konferencja: Third International Conference on Solid State Crystals. Materials Science and Applications. ICSSC '2002 ; (14.10-18.10.2002 ; Zakopane, Poland)
• Języki publikacji: EN

Abstrakty

EN

The performance of very long wavelength infrared (VLWIR) HgCdTe photodiodes at temperatures ranging from 77 K up to 150 K is presented. The effect of inherent and excess current mechanisms on quantum efficiency and dynamic resistance-area RA product is analysed. Different methods of determining the ideality factor are shown and among them the one based on the use of RA product versus bias voltage proves to be most reliable. At higher temperatures, however, the calculated ideality factor does not give any useful information about the nature of the p-n junction current due to significant influence of the series and shunt resistances. A comparison of the experimental data with the results of analytical and numerical calculations shows that the photodiodes with cut-off wavelength up to 14.5 um are diffusion-limited at temperatures exceeding 100K.

Słowa kluczowe

EN

HgCdTe photodiodes; heterostructures; ideality factor; RoA product; quantum efficiency

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2003
• Tom: Vol. 11, No. 2
• Strony: 143--149
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Wenus J.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

autor

Rutkowski J.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

autor

Rogalski A.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

Bibliografia

• 1. M.B. Reine, "Photovoltaic detectors in HgCdTe", Infrared Detectors and Emitters: Materials and Devices, Chapt.12 edited by P. Capper and C.T. Elliott, Chapman and Hall, London, 2000.
• 2. A. Rogalski, K. Adamiec, and J. Rutkowski, Narrow-Gap Semiconductor Photodiodes, SPIE Optical Engineering Press, Bellingham, 2000.
• 3. H.R. Vydyanath and V. Nathan, "Materials and process issues in the fabrication of high performance VLWIR HgCdTe infrared detectors", Opto-Electron. Rev. 9, 1-5 (2001).
• 4. Li Xiangyang, Zhao Jun, Lu Huiqing, Fang Jiaxiong, and Xia Yueyuan, "Forward c1ment-voltage characteristics of HgCdTe p-on-n photodiodes", Proc. SPIE 3379, 601-607 (1998).
• 5. G. Sarusi, A. Zemel, Ariel Sher, and D. Eger, "Forward tunneling current in HgCdTe photodiodes", J. Appl. Phys. 76, 4420-4425 (1994).
• 6. J. Wenus and J. Rutkowski, "Influence of valence-band barriers in VLWIR HgCdTe P-on-n heterojunctions on photodiode parameters", Physica Status Solid (b) 229, 1093-1096 (2002).
• 7. M.H. Weiler and G.J. Tarnowski, "Characterization of HgCdTe P-on-n Characteroization photodiodes and their defects using vaiiable-area test structures", J. Electr. Materials 26, 635-642 (1997).
• 8. A.I. D'Souza, R.E. DeWames, P.S. Wijewarnasuriya, G. Hildebrandt, and J .M. Arias, "Current mechanism in VLWIR Hg 1-xCdxTe photodiodes", J. Electr. Materials 30, 585-589 (2001).
• 9. J. Wenus, J. Rutkowski, and A. Rogalski, "Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes", IEEE Transactions on Electron Devices 48, 1326-1332 (2001).
• 10. M.H. Weiler and M.B. Reine, "Effect of a valence-band barrier on the quantum efficiency and background-limited dynamic resistance of compositionally graded HgCdTe P-on-n heterojunction photodiodes", J. Electr. Materials 24, 1329-1339 (1995).