Simulation of threshold operation of GaInNAs diode lasers

• Autorzy: Sarzała R. P. , Maćkowiak P. , Wasiak M. , Czyszanowski T. , Nakwaski W.
• Konferencja: Third International Conference on Solid State Crystals. Materials Science and Applications. ICSSC '2002 ; (14.10-18.10.2002 ; Zakopane, Poland)
• Języki publikacji: EN

Abstrakty

EN

The advanced three-dimensional fully self-consistent optical-electrical-thermal-gain model of the 1.3-um (GaIn)(NAs)GaAs vertical cavity surface-emitting laser (VCSEL) has been developed to simulate its room-temperature (RT) continuous-wave (CW) performance characteristics and to enable its structure optimisation. The standard GaInNAs VCSEL structure with an intracavity-contacted configuration exhibits very nonuniform current injection into its active region, whereas a uniform current injection is important in long-wavelength VCSELs for low thereshold, high-efficiency and stable-mode operation. Therefore we decided to insert an additional tunnel junction withim the active-region neighbourhood. The tunnel junction is shown to enhance effectively hole injection via a lateral electron current, with only a modest increase (a small penalty) in voltage drop and series resistance compared to standard devices.

Słowa kluczowe

EN

GaInNAs laser; GaInNAs VCSEL; simulation of performance characteristics; tunnel junction

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2003
• Tom: Vol. 11, No. 2
• Strony: 139--142
• Opis fizyczny: Bibliogr. 11 poz.

Twórcy

autor

Sarzała R. P.

• Institute of Physics, Technical University of Łódź, 219 Wólczańska Str., 93-005 Łódź, Poland

autor

Maćkowiak P.

• Institute of Physics, Technical University of Łódź, 219 Wólczańska Str., 93-005 Łódź, Poland

autor

Wasiak M.

• Institute of Physics, Technical University of Łódź, 219 Wólczańska Str., 93-005 Łódź, Poland

autor

Czyszanowski T.

• Institute of Physics, Technical University of Łódź, 219 Wólczańska Str., 93-005 Łódź, Poland

autor

Nakwaski W.

• Institute of Physics, Technical University of Łódź, 219 Wólczańska Str., 93-005 Łódź, Poland
• Center for High Technology Materials, University of New Mexico, Albuquerque, USA

Bibliografia

• 1. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watalhiki, and Y. Yazawa, "GalnNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance", Jpn. J. Appf. Phys. 35, 1273-1278 (1996).
• 2. K. Nakahara, M. Kondow, T. Kitatani, M. Larson, and K. Uomi, "1.3 μm continuous-wave lasing operation in GalnNAs quantum-well lasers", IEEE Photon. Techn. Lett. 10, 487-488 (1998).
• 3. K.D. Choquette, J.F. Klem, A.J. Fischer, O. Blum, A.A. Allerman, I.J. Fritz, S.R. Kurtz, W.G. Breiland, R. Sieg, K.M. Geib, J.W. Scott, and R.L. Naone, "Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm", Electron. Lett. 36, 1388-1389 (2000).
• 4. H. Wenzel and H.J. Wünsche, "The effective frequency method in the analysis of vertical-cavity surface-emitting lasers", IEEE J. Quantum Electron. 33, 1156-1562 (1997).
• 5. P. Maćkowiak and W. Nakwaski, "Some aspects of designing efficient nitride VCSEL resonator", J. Phys. D: Appl. Phys. 34, 954-958 (2001).
• 6. G. Steinle, H. Riechert, and A. Yu. Egorov, "Monolithic VCSEL with InGaAsN active region emitting at 1.28 μm and CW output power exceeding 500 μW at room temperature", Electron. Lett. 37, 93-95 (2001).
• 7. Y. Kotaki, S. Uchiyama, and K. Iga, Ext. Ahstr. 16th Conf. Solid State Devices and Materials, Kobe, 133 (1984).
• 8. J.J. Wierer, P.W. Evans, and N. Holonyak, Jr, "Baried tunnel contact junction A1GaAs-GaAs-InGaA quantum well heterostructure lasers with oxide defined lateral currents", Appl. Phys. Lett. 71, 2286-2288 (1997).
• 9. A.N. Korshak, Z.S. Gribnikov, and V.V. Mitin, "Tunnel junction-connected distributed-feedback vertical-cavity surface-emitting laser", Appl. Phys. Lett. 73, 1475-1477 (1998).
• 10. S. Sekiguchi, T. Miyamoto, T. Kimura, G. Okazaki, F. Koyama, and K. Iga, "lmprovement of current injection uniformity and device resistance in long-wavelength vertical-cavity surface-emitting ,laser using a tunnel junction", Jpn. J. Appl. Phys. 39, 3997-4001 (2000).
• 11. D.l. Babic, J Piprek, K. Streubel, R.P. Mirin, N.M. Margalit, D.E. Mars, J.E. Bowers, and E. Hu, "Design and analysis of double-fused 1.55-μm vertical-cavity lasers", IEEE J. Quantum Electron. 33, 1369-1383 (1997).