Designing of possible structures of nitride vertical-cavity surface-emitting lasers

• Autorzy: Maćkowiak P. , Czyszanowski T. , Sarzała R. P. , Wasiak M. , Nakwaski W.
• Konferencja: Third International Conference on Solid State Crystals. Materials Science and Applications. ICSSC '2002 ; (14.10-18.10.2002 ; Zakopane, Poland)
• Języki publikacji: EN

Abstrakty

EN

Performance of various possible designs of 400-nm nitride vertical-cavity surface-emitting lasers (VCSELs) has been analysed with the aid of the advanced three - dimensional (3D) thermal-electrical-optical-gain self-consistent threshold simulation. It has been demonstrated that it is practically impossible to reach the fundamental - mode operation in nitride VCSELs of the traditional design with two ring contacts. To enhance this desired operation, uniformity of current injection into VCSEL active regions should be dramatically improved. Therefore we focused our research on designs with tunnel junctions and/or a semitransparent contact. In particular, it has been proved that the design with two cascading active regions, two tunnel junctions and a semitransparent contact may offer the most promissing room-temperature performance characteristics for both pulse and continuous-wave operation. In particular, this design offers high mode selectivity with distinct fundamental transverse mode domination. Our simulations reveal, that the thickness and localization of a semitransparent contact as well as localization of active regions and tunnel junctions are crucial for a succesful construction designing.

Słowa kluczowe

EN

computer simulation; nitride VCSEL; tunnel junction; ITO contact

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2003
• Tom: Vol. 11, No. 2
• Strony: 119--126
• Opis fizyczny: Bibliogr. 48 poz.

Twórcy

autor

Maćkowiak P.

• Institute of Physics, Technical University of Łódź, 219 Wólczańska Str., 93-005 Łódź, Poland

autor

Czyszanowski T.

• Institute of Physics, Technical University of Łódź, 219 Wólczańska Str., 93-005 Łódź, Poland

autor

Sarzała R. P.

• Institute of Physics, Technical University of Łódź, 219 Wólczańska Str., 93-005 Łódź, Poland

autor

Wasiak M.

• Institute of Physics, Technical University of Łódź, 219 Wólczańska Str., 93-005 Łódź, Poland

autor

Nakwaski W.

• Institute of Physics, Technical University of Łódź, 219 Wólczańska Str., 93-005 Łódź, Poland

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Uwagi

Błędna numeracja pozycji bibliografi. Prawidłowa liczba pozycji 47.