Kinetics of photoluminescence of porous silicon studied by photo-luminescence excitation spectroscopy and time-resolved spectroscopy

• Autorzy: Łukasiak Z. , Dalasiński P. , Bała W.
• Konferencja: Third International Conference on Solid State Crystals. Materials Science and Applications. ICSSC '2002 ; (14.10-18.10.2002 ; Zakopane, Poland)
• Języki publikacji: EN

Abstrakty

EN

Photoluminescence (PL) spectra and excitation spectra (PLE) (under steady-state conditions), time resolved spectra (PL-TRS) and decay curves of photoluminescence (PL-DC) in micro- and nanosecond range (under pulsed operation) at different temperatures (10 K-room) on anodically etched boron–doped silicon are presented. PLE shows that visible PL is excited by light from UV region. PL and PL-TRS exhibit multiband structure and can be decomposed as a sum of few Gaussians. PL-DCs have multiexponential shape. Relaxation times depend on wavelength of the observation. To explain our results we assumed a model in which the multibarrier structure is formed by larger Si crystallites or wires (quantum well) surrounded by Si crystallites with diameters in the nanometer range (barrier region). The visible photoluminescence originates from radiative recombination between discrete energy levels in a quantum well

Słowa kluczowe

EN

porous silicon; photoluminescence; decay times; time resolved spectra; excitation spectra

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2003
• Tom: Vol. 11, No. 2
• Strony: 113--117
• Opis fizyczny: Bibliogr. 16 poz.

Twórcy

autor

Łukasiak Z.

• Faculty of Physics, Astronomy and Informatics, N. Copernicus University, 5 Grudziądzka Str., 87-100 Toruń, Poland

autor

Dalasiński P.

• Faculty of Physics, Astronomy and Informatics, N. Copernicus University, 5 Grudziądzka Str., 87-100 Toruń, Poland

autor

Bała W.

• Faculty of Physics, Astronomy and Informatics, N. Copernicus University, 5 Grudziądzka Str., 87-100 Toruń, Poland

Bibliografia

• 1. L. Esaki and R. Tsu, IBM J. Res. Develop. 14, 61 (1970).
• 2. L.T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers", Appl. Phys. Lett. 57, 1046-1048 (1990).
• 3. W. Bała, G. Głowacki, Z. Łukasiak, M. Drozdowski, M. Kozielski, E. Nossarzewska-Orłowska, and A. Brzozowski, "Photoluminescence, reflectivity and Raman investigations of nanocrystallites in luminescent porous silicon", Acta Phys. Polon. A87, 445-448 (1995).
• 4. J .P. Proot, C. Delerue, and G. Allen, "Electronic structure and optical properties of silicon crystallites: application to porous silicon", Appl. Phys. Lett. 61, 1948-1050 (1992).
• 5. Z. Łukasiak, Z. Wyrzykowski, J. Sylwisty, and W. Bała, "Influence of gas adsorption on photoluminescence properties of porous silicon layers", Electron Technology 33, 207-209 (2000).
• 6. L. Seals and J.L. Gole, "Rapid, reversible, sensitive porous silicon gas sensor", J. Appl. Phys. 91, 2519-2523 (2002).
• 7. G. Belomoin, J. Therrien, A. Smith, S. Rao, R. Twesten, S. Chaieb, M.H. Nayfeh, L. Wagner, and L. Mitas, "Observation of magic discrete family of ultrabright Si nanoparticles", Appl. Phys. Lett. 80, 841-843 (2002).
• 8. P.R. Bevington, Data Reduction and Error Analysis for the Physical Sciences, pp. 204-246, McGraw Hill, NY, 1969.
• 9. D. Marquardt, "An algorithm for least-squares estimation of nonlinear parameters", J. Soc. Indust. Appl. Math. 11, 431-441 (1963).
• 10. M. Lannoo, G. Allan, and C. Delerue, Structural and Optical Prope1ties of Porous Silicon Nanostructures, p. 187, edited by G. Amato, C. Delerue, H.J. von Bardeleben, Gordon and Breach, Amsterdam, 1997.
• 11. R.J. Martin-Palma, L. Pascual, P. Herrero, and J.M. Martinez-Duart, "Direct determination of grain sizes, lattice parameters, and mismatch of porous silicon", Appl. Phys. Lett. 81, 25-27 (2002).
• 12. Z. Łukasiak, M. Murawski, and W. Bała , "Photoluminescence of porous silicon under pulsed excitation", SPIE 4413, 157-162 (2001).
• 13. J. Porębski and P. Kohoroda, "Spice - a program of nonlinear analysis of electronic systems", p. 89, Wydawnictwa Naukowo-Techniczne, Warsaw, 1995. (in Polish).
• 14. O. Bisi, S. Ossicini, and L. Pavesi, "Porous silicon: a quantum sponge structure for silicon based optoelectronic", Surface Sci. Rep. 38, 1-126 (2000).
• 15. L. Bergman, M. Dutta, M. Stroscio, S. Komirenko, R. Nemanich, C. Eiting, D. Lambert, H. Kwon, and R. Dupuis, "Photo-luminescence and recombination mechanisms in GaN/AlGaN superlattice", Appl. Phys. Lett. 76, 1969-1971 (2000).
• 16. J.C. Vial, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, and R. Romestain, "Mechanisms of visible light emission from electro-oxidized porous silicon", Phys. Rev. B45, 14171-14176 (1992).