HgCdTe epilayers on GaAs : growth and devices

• Autorzy: Varavin V. S. , Vasiliev V. V. , Dvoretsky S. A. , Mikhailov N. N. , Ovsyuk V. N. , Sidorov Y. G. , Suslyakov A. O. , Yakushev M. V. , Aseev A. L.
• Konferencja: Third International Conference on Solid State Crystals. Materials Science and Applications. ICSSC '2002 ; (14.10-18.10.2002 ; Zakopane, Poland)
• Języki publikacji: EN

Abstrakty

EN

View of basic and specific physical and chemical features of growth and defect formation in mercury cadmium telluride (MTC) heterostructures (HS's) on GaAs substrates by molecular beam epitaxy (MBE) was made. On the basis of this knowledge a new generation of ultra high vacuum set, ultra-fast ellipsometer of high accuracy and automatic system for control of technological processes was produced for reproducibility of growth MCT HS's on substrates up to 4'' in diameter. The development of industrially oriented technology of MCT HS's growth by MBE on GaAs substrates 2'' in diameter and without intentional doping is presented. The electrical characteristics of n-type and p-type of MCT HS's and uniformity of MCT composition over the surface area are excellent. The residual donor and acceptor centres are supposed as hypothetically tellurium atoms in metalic sublattice ("antisite" tellurium) and double-ionised mercury vacancies. The technology of fabricating focal plane arrays is developed. The high quality characteristics of infrared detectors conductance and diode mode are measured. Calculations of detector parameters predicted the improvement in serial resistance and detectivity of infrared diode detectors based on MCT heterostructures with graded composition throughout the thickness.

Słowa kluczowe

EN

MCT; MBE; growth GaAs; Si; ellipsometer; heterostructures; infrared detectors; photoconductors; focal plane arrays; p-n junctions

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2003
• Tom: Vol. 11, No. 2
• Strony: 99--111
• Opis fizyczny: Bibliogr. 36 poz.

Twórcy

autor

Varavin V. S.

• Institute of Semiconductor Physics SB RAS, 13 Lavrentieva Av., 630090 Novosibirsk, Russia

autor

Vasiliev V. V.

• Institute of Semiconductor Physics SB RAS, 13 Lavrentieva Av., 630090 Novosibirsk, Russia

autor

Dvoretsky S. A.

• Institute of Semiconductor Physics SB RAS, 13 Lavrentieva Av., 630090 Novosibirsk, Russia

autor

Mikhailov N. N.

• Institute of Semiconductor Physics SB RAS, 13 Lavrentieva Av., 630090 Novosibirsk, Russia

autor

Ovsyuk V. N.

• Institute of Semiconductor Physics SB RAS, 13 Lavrentieva Av., 630090 Novosibirsk, Russia

autor

Sidorov Y. G.

• Institute of Semiconductor Physics SB RAS, 13 Lavrentieva Av., 630090 Novosibirsk, Russia

autor

Suslyakov A. O.

• Institute of Semiconductor Physics SB RAS, 13 Lavrentieva Av., 630090 Novosibirsk, Russia

autor

Yakushev M. V.

• Institute of Semiconductor Physics SB RAS, 13 Lavrentieva Av., 630090 Novosibirsk, Russia

autor

Aseev A. L.

• Institute of Semiconductor Physics SB RAS, 13 Lavrentieva Av., 630090 Novosibirsk, Russia

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