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High power quantum cascade lasers grown by GasMBE

Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Konferencja
Third International Conference on Solid State Crystals. Materials Science and Applications. ICSSC '2002 ; (14.10-18.10.2002 ; Zakopane, Poland)
Języki publikacji
EN
Abstrakty
EN
This paper is a brief summary of the technological development and state-of-the-art performance of quantum cascade lasers (QCLs) produced at the Centre for Quantum Devides. Laser design will be discussed, as well as experimental details of device fabrication. Recent work has focused on development of high peak and average power QCLs emitting at room temperature and above. Scaling of the output is demonstrated by increasing the number of emitting regions in the waveguide core. At λ = 9 um, over 7 W of peak power has bee demonstrated at room temperature for a single diode, with an average power of 300 mW at 6% duty cycle. At shorter wavelengths, laser development includes the use of highly strain-balanced heterostructures in order to maintain a high conduction band offset and minimize leakage current. At λ = 6 um, utilizing a high reflective coating and epilayer-down mounting of the laser, we have demonstrated 225 mW of average power from a single facet at room temperature. Lastly, these results are put in the perspective of other reported results and possible future directions are discussed.
Twórcy
autor
  • Centre for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, USA
autor
  • Centre for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, USA
Bibliografia
  • 1. J. Faist, F. Capasso, D.L. Sivco, C. Sirtori, AL. Hutchinson, and A.Y. Cho, "Quantum cascade laser", Science 264, 553 (1994).
  • 2. P. Yu and M. Cardana, Fundamentals of Semiconductors, Springer-Verlag, Berlin, 1996.
  • 3. C. Sirtori, J. Faist, F. Capasso, D. Sivco, A Hutchinson, and A. Cho, "Quantum cascade laser with plasmon-enhanced waveguide operating at 8.4 μm wavelength", Appl. Phys. Lett. 66, 3242-3244 (1996).
  • 4. C.G. Van de Walle, "Band lineups and deformation potentials in the model-solid theory", Phys. Rev. B39, 1871-1883 (1989).
  • 5. C. Sirtori, J. Faist, F. Capasso, D.L. Sivco, A.L. Hutchinson, and AY. Cho, "Mid-infrared (8.5 μm) semiconductor laser operating at room temperature", IEEE Photonics Techology. Lett. 9, 294-296 (1997).
  • 6. G. Scamarcio, M. Troccoli, F. Capasso, A.L. Hutchinson, D.L. Sivco, and A.Y. Cho, "High peak power (2.2 W) superlattice quantum cascade laser", Electronics Lett. 37, 295-296 (2001).
  • 7. A Matlis, S. Slivken, A Tahraoui, K. J. Luo, J. Diaz, Z. Wu, A Rybaltow ki, C. Jelen, and M. Razeghi, "Low-threshold and high power λ~9.0 μm quantum cascade lasers operating at room temperature", Appl. Phys. Leff. 77, 1741-1743 (2000).
  • 8. M. Beck, D. Hofstetter, T. Aellen, J. Faist, U. Oesterle, M. Ilegems, E. Gini, and H. Melchior, "Continuous wave operation of a mid-infrared semiconductor laser at room temperature", Science 295, 301-305 (2002).
  • 9. S. Slivken, Z. Huang, A Matli, A Evans, and M. Razeghi, "High power (λ ~9 μm) quantum cascade lasers", Appl. Phys. Lett. 80, 4091-4093 (2002).
  • 10. J. Faist, F. Capasso, D.L. Sivco, AL. Hutchinson, S.N.G. Chu, and AY. Cho, "Short wavelength (λ ~3.4 μm) quantum cascade laser based on strained compensated InGaAs/AllnAs", Appl. Phys. Lett.72, 680-682 (1998).
  • 11. F.Q. Liu, Y.Z. Zhang, Q.S. Zhang, D. Ding, B. Xu, Z.G. Wang, D.S. Jiang, and B.Q. Sun, "High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers", Semicond. Sci. Technol. 15, L44-L46 (2000).
  • 12. S. Slivken, unpublished.
  • 13. D. Hofstetter, M. Beck, T. Aellen, and J. Faist, "High-temperature operation of di tributed feedback quantum-cascade laser at 5.3 μm", Appl Phys. Lett. 78, 396-398 (2001).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA2-0007-0002
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