On the microstructural origin of reversible photoinduced transformations in amorphus As₂Se₃

• Autorzy: Shpotyuk O. I.
• Języki publikacji: EN

Abstrakty

EN

A microstructural mechanism of photoinduced structural transformations in amorphous As₂Se₃ thin films was studied by IR Fourier-transform spectroscopy in the range of 300-100 cm⁻¹. It was shown that the stage of irreversible photostructural changes in the freshly-deposited films was connected with coordination of topological defects formation accompanied by homopolar chemical bonds switchings in heteropolar ones. By contrast, the reversible stage of photoinduced effects were caused by two different types of transformations-heteropolar bonds switching in homopolar ones, as well as heteropolar bridge bonds switching in short layer ones. Both processes were associated with the formation of anomalously coordinated topological defect pairs and atomic displacements at the medium-range ordering level.

Słowa kluczowe

EN

amorphous semiconductors; photoinduced changes; IR Fourier spectroscopy

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2003
• Tom: Vol. 11, No. 1
• Strony: 19--25
• Opis fizyczny: Bibliogr. 28 poz.

Twórcy

autor

Shpotyuk O. I.

• Lviv Scientific Research Institute of Materials, Scientific Research Company "Carat", 202 Stryjska Str., 79031 Lviv, Ukraine,

Bibliografia

• 1. J.P. DeNeufville, S.C. Moss, and S.R. Ovshinsky, "Photostructural transformation in amorphous As2Se3 and As2S3 films", J. Non-Cryst. Solids 13, 191-223 (1974).
• 2. K. Tanaka, "Evidence for reversible photostructural change in local order of amorphous As2S3 film", Solid State Com. 15, 1521-1524 (1974).
• 3. M.N. Brodsky, Amorphous Semiconductors, Mir, Moscow, 1982.
• 4. S.R. Elliott, "A unified model for reversible photostructural effects in chalcogenide glasses", J. Non-Cryst. Solids 81, 71-98 (1986).
• 5. H. Fritzsche, "The origin of reversible and irreversible photostructural changes in chalcogenide glasses", Phil. Mag. B68, 561-572 (1993).
• 6. M. Frumar, A.F. Firth, and A.E. Owen, "A model for photostructural changes in the amorphous As-S system", J. Non-Cryst. Solids 59/60, 921-924 (1983).
• 7. V.N. Komelyuk, I.V. Savytsky, O.I. Shpotyuk, and I.I. Yaskovet , "The mechanism of reversible photoinduced effects in As2S3 thin films", Fiz. Tverd. Tela 31, 311-313 (1989). (in Russian).
• 8. O.I. Shpotyuk, "Photostructural transformations in amorphous chalcogenide semiconductors", Phys. Stat. Sol. B183, 365-374 (1994).
• 9. O.I. Shpotyuk, J. Kasperczyk, and I.V. Kityk, "Mechanism of rever ible photoinduced optical effects in amorphous A 2S3", J. Non-Cryst. Solids 15, 218-225 (1997).
• 10. O.I. Shpotyuk, J. Kasperczyk, S. Szymura, and I. Kityk, "Mechanism of photoinduced optical effects in amorphous As2S3. Part II. Reversible changes of optical properties", Opto-Electron. Rev. 4, 69-76 (1996).
• 11. C.Y. Yang, M.A. Paesler, and D.E. Sayers, "Measurement of local structural configuration associated with reversible photostructural changes in arsenic trisulphide films", Phys. Rev. B36, 9160-9167 (1987).
• 12. A.V. Kolobov, H. Oyanagi, K. Tanaka, and K. Tanaka, "Photostructural changes in amorphous selenium: an in situ EXAFS study at low temperature", J. Non-Cryst. Solids 198&200, 709-713 (1996).
• 13. S.A. Solin and G.N. Papatheodorou, "Irreversible thermostructural transformations in amorphous As2S3 films: a light scattering study", Phys. Rev. B15, 2084-2090 (1977).
• 14. U. Strom and T.P. Martin, "Photo-induced changes in the infrared vibration spectrum of evaporated As2S3", Solid State Com. 29, 527-530 (1979).
• 15. T. Mori, K. Matsuishi, and T. Arai, "Vibrational properties and network topology of amorphous As-S system ", J. Non-Cryst. Solids 65, 269-283 (1984).
• 16. A.M. Shkolnikova, V.S. Gerasimenko, and E.V. Shkolnikov, "Investigation of vibrational spectra of glasses of As2S3-Se system, prepared in different synthesis regimes", Fiz. Khim. Stekla 8, 497-500 (1982). (in Russian).
• 17. E.V. Shkolnikov, V.S. Gerasimenko, and Z.U. Borisova, "Vibrational spectra of glasses and partial volumes of components in Se-As2 Se3 system", Fiz. Khim. Stekla 3, 338-342 (1977).
• 18. G. Lucovsky and F.L. Galeener. "Infrared studies of amorphous semiconductors", Proc. 6th Int. Conf Structure and Properties of Non-Crystalline Semiconductors, Nauka, Leningrad, 1976.
• 19. J. Zirke and A. Tausend, "Disorder-induced effects on the infrared spectra of amorphous selenium", Abst. 6th Int. Conf. Structure and Properties of Non-Crystalline Semiconductors, Nauka, Leningrad, 1976.
• 20. A.L. Kartuzhanskij, Nonsilver Photographic Processes, Nauka, Moscow, 1984.
• 21. A. Felts, Amorphous and Vitreous Inorganic Solids, Mir, Moscow, 1986.
• 22. N.F. Mott, E.A. Davis, and R.A. Street, "States in the gap and recombination amorphous semiconductors," Phil. Mag. 32, 961-996 (1975).
• 23. M.A. Kastner, D. Adler, and H. Fritzshe, "Valence-alternation model for localised gap states in lone-pair semiconductors", Phys. Rev. Lett. 37, 1504-1507 (1976).
• 24. M.A. Kastner, "Defect chemistry and states in the gap of lone-pair semiconductors", J. Non.-Cryst. Solids 31, 223-240 (1978).
• 25. R.A. Street, "Recombination in amorphous semiconductors", Phys. Rev. B17, 3984-3995 (1978).
• 26. K.G. Rao and R. Mohan, "Chemical bond approach to determining conductivity band gaps in amorphous chalcogenides and ptictides", Solid State Com. 39, 1065-1068 (1981).
• 27. G. Chen, H. Jain, S. Khalid, J. Li, D.A. Drabold, and S.R. Elliott, "Study of structural changes in amorphous As2 Se3 by EXAFS under in situ laser irradiation", Solid State Com. 120, 149-153 (2001).
• 28. J. Li and D.A. Drabold, "Direct calculation of light-induced structural change and diffusive motion in glassy As2 Se3", Phys. Rev. Lett. 85, 2785-2788 (2000).