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Tytuł artykułu

Quantum dot infrared photodetector

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Wybrane pełne teksty z tego czasopisma
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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
This paper discusses key issues related to the quantum dot infrared photodetector (QDIP). These are the normal incidence response, the dark current, and the responsivity and detectivity. We attempt to address the following questions of what is QDIP' s potential, what is lacking, and what is needed to make the device interesing for practical applications. It is argued that so for the present QDIP devices have not fully demonstrated the potential advantages. Representative experimental results are compared with characteristics of quantum well infrared photodetectors. Areas that need improvements are pointed out.
Twórcy
autor
  • Institute for Microstructural Sciences, National Research Council, Ottawa K1A OR6, Canada
Bibliografia
  • 1. H.C. Liu, "Quantum well infrared photodetector physics and novel devices", in Semiconductors and Semimetals, Vol. 62, pp. 126-196, edited by H. C. Liu and F. Capasso, Academic Press, San Diego, 2000.
  • 2. S.D. Gunapala and S.V. Bandara, "Quantum well infrared photodetector focal plane arrays," in Semiconductors and Semimetals, Vol. 62, pp. 197-282, edited by H. C. Liu and F. Capasso, Academic Press, San Diego, 2000.
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Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA2-0006-0119
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