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Tytuł artykułu

Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy

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Języki publikacji
EN
Abstrakty
EN
Maskless pendeo-epitaxy (PE) involves the lateral and, commonly, the vertical growth of cantilevered “wings” of material from the side-walls of unmasked etched forms. Cross-sectional SEM micrographs revealed that films grown at 1020 C exhibited similar vertical [0001] and lateral [1120] growth rates. Increasing the temperature increased the latter due to the higher thermal stability of the GaN(1120). The (1120) surface was atomically smooth under all growth conditions with an RMS = 0.17 nm. High resolution X-ray diffraction (HRXRD) and atomic force microscopy of the PE films confirmed transmission electron microscopy results regarding the reduction in dislocation density in the wings. Measurement of strain indicated that the wing material is crystallographically relaxed as evidenced by the increase in the c-axis lattice parameter and the upward shift of the E2 Raman line frequency. However, tilting of the wings of ≤ 0.15 occurred due to the tensile stresses in the stripes induced by the mismatch in the coefficients of thermal expansion between the GaN and the underlying substrate.
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  • Department of Chemical Engineering, Box 7919, North Carolina State University, Raleigh, NC 27695, USA
Bibliografia
  • 1. D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, "Anisotropic epitaxial lateral growth in GaN selective area epitaxy", Appl. Phys. Lett. 71, 1204-1206 (1997).
  • 2. H. Marchand, J. P. Ibbetson, P. T. Fini, S. Chichibu, S. J. Rosner, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapour deposition", 25th Int. Symp. Compound. Semiconductors, Nara, Japan, 1998.
  • 3. I. H. Kim, C. Sone, O. H. Nam, Y. J. Park, and T. Kim, "Crystal tilting in GaN grown by pendeopitaxy method on sapphire substates", Appl. Phys. Lett. 75, 4109-4111 (1999).
  • 4. A. Sakai, H. Sunakawa, A. Kimura, and A. Usui, "Self-organised propagation of dislocations in GaN films during epitaxial lateral overgrowth", Appl. Phys. Lett. 76, 442-444 (2000).
  • 5. X. Zhang, P. D. Dapkus, and D. H. Rich, "Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation", Appl. Phys. Lett. 77, 1496-1498 (2000).
  • 6. O. H. Nam, M. D. Bremser, T. S. Zheleva, and R. F. Davis, "Lateral epitaxy of low defect density GaN layers via organometallic vapour phase epitaxy" Appl. Phys. Lett. 71, 2638-2640 (1997).
  • 7. O. H. Nam, T. S. Zheleva, M. D. Bremser, and R. F. Davis, "Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapour phase epitaxy", J. Elect. Mater. 27, 233-237 (1998).
  • 8. R. F. Davis, T. Gehrke, K. J. Linthicum, T. S. Zheleva, E. A. Preble, P. Rajagopal, C. A. Zorman, and M. Mehregany, "Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterisation", J. Cryst. Growth 225, 134-140 (2001).
  • 9. R. S. Q. Fareed, J. W. Yang, J. Zhang, V. Adivarahan, V. Chaturvedi, and M. A. Khan, "Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapour deposition", Appl. Phys. Lett. 77, 2343-2345 (2000).
  • 10. T. Gehrke, K. J. Linthicum, E. Preble, P. Rajagopal, C. Ronning, C. Zorman, M. Mehregany, and R. F. Davis, "Pendeo-epitaxial growth of gallium nitride on silicon subtrates", J. Electron. Mater. 29, 306-310 (2000).
  • 11. K. Linthicum, T. Gehrke, D. Thomson, E. Carlson, P. Rajagopal, T. Smith, D. Batchelor, and R. F. Davis, "Pendeo-epitaxy of gallium nitride thin films", Appl. Phys. Lett. 75, 196-198 (1999).
  • 12. D. B. Thomson, T. Gehrke, K. J. Linthicum, P. Rajagopal, and R. F. Davis, "Ranges of deposition temperatures applicable for metalorganic vapour phase epitaxy of GaN films via the technique of pendeo-epitaxy", MRS Internet J. Nitride Semicond. Res. 4S1, G3.7 (1999).
  • 13. T. Zheleva, S. Smith, D. Thomson, and K. Linthicum, "Pendeo-epitaxy- a new approach for lateral growth of gallium nitride films", J. Electron. Mater. 28, L5-L8 (1999).
  • 14. T. Gehrke, K. J. Linthicum, E. A. Preble, and R. P. Davis, "Pendeo-epitaxy of gallium nitride and aluminium nitride films and heterostructures on silicon carbide substrates", MRS Internet J. Nitride Semicond. Res. 5S1, W2.4 (2000).
  • 15. T. Gehrke, K. J. Linthicum, D. B. Thomson, P. Rajagopal, A. D. Batchelor, and R. F. Davis, "Pendeo-epitaxy of gallium nitride and aluminium nitride films and heterostructures on silicon carbide substrates", MRS Internet J. Nitride Semicond. Res. 4S1, G3.2 (1999).
  • 16. P. Fini, H. Marchand, J. P. Ibbetson, S. P. DenBaars, U. K. Mishra, and J. S. Speck, "Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction", J. Cryst. Growth 209, 581-590 (2000).
  • 17. S. Tomiya, K. Finato, T. Asatsuma, T. Hino, S. Kijima, T. Asano, and M. Ikeda, "Dependence of crystallographic tilt and defect distribution on mask material in epitaxial lateral overgrown GaN layers", Appl. Phys. Lett. 77, 636-638 (2000).
  • 18. P. Pini, A. Munkholm, C. Thompson, G. B. Stephenson, J. A. Eastman, M. V. Ramana Murty, O. Auciello, L. Zhao, S. P. DenBaars, and J. S. Speck, "In-situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN", Appl. Phys. Lett. 76, 3893-3895 (2000).
  • 19. H. Marchand, J. P. Ibbetson, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapour deposition", J. Cryst. Growth 195, 328-332 (1998).
  • 20. W. C. Johnson, J. B. Parsons, and M. C. Crew, J. Phys. Chem. 36, 2651 (1932).
  • 21. A. Rebey, T. Boufaden, and B. El Jani, "In situ optical monitoring of the decomposition of GaN thin films", J. Cryst. Growth 203, 12 (1999).
  • 22. D. D. Koleske, A. E. Wickenden, R. L. Henry, M. E. Twigg, J. C. Culbertson, and R. J. Gorman, "Enhanced GaN decomposition at MOVPE pressures", MRS Internet J. Nitride Semicond. Res. S1, G3.70 (1999).
  • 23. D. D. Koleske, A. E. Wickenden, R. L. Henry, M. E. Twigg, J. C. Culbertson, and R. J. German, "Enhanced GaN decomposition in H2 near atmospheric pressures", Appl. Phys. Lett. 73, 2018-2020 (1998).
  • 24. D. D. Koleske, A. E. Wickenden, and R. L. Henry, "GaN decomposition in ammonia", MRS Internet J. Nitride Semicond. 5S1, W3.64 (1999).
  • 25. M. Mayumi, F. Satoh, Y. Kumagai, K. Takemoto, and A. Koukitu, "In-situ gravimetric monitoring of decomposition rate from GaN epitaxial surface", Jpn. J. Appl. Phys. 39, L707-L709 (2000).
  • 26. D. D. Koleske, A. E. Wickenden, R. L. Henry, W. J. DeSisto, and R. J. German, "Growth model for GaN with comparison to structural, optical and electrical properties", J. Appl. Phys. 84, 1998 (1998).
  • 27. O. Briot, S. Clur, and R. L. Aulombard, "Competitive adsorption effects in the metalorganic vapour phase epitaxy of GaN", Appl. Phys. Lett. 71, 1990-1992 (1997).
  • 28. O. Briot, J. P. Alexis. M. Tchounkeu, and R. L. Aulombard, "Optimisation of the MOVPE growth of GaN on sapphire", Mater. Sci. Eng. B43, 147-153 (1997).
  • 29. C. J. Sun, P. Kung, A. Saxler, H. Ohsato, E. Bigan, M. Razeghi, and D. K. Gaskill, "Thermal stability of GaN thin films grown on (0001) Al2O3, (1120) Al2O3 and (000l)si 6H-SiC substrates", J. Appl. Phys. 76, 236-241 (1994).
  • 30. K. Hiramatsu, S. Itoh, H. Amano, I. Akasaki, N. Kuwano, T. Shiraishi, and K. Oki, "Growth mechanisms of GaN grown on sapphire with A1N buffer layers by MOVPE", J. Cryst. Growth 115, 628-633 (1991).
  • 31. J. E. Northrup and J. Neugebauer, "Theory of GaN(1010) and (1120) surfaces", Phys. Rev. B53, Rl0477-10480 (1996).
  • 32. D. Kapolnek, X. H. Wu, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, and J. S. Speck, "Structural evolution in epitaxial metalorganic chemical vapour deposition grown GaN films on sapphire", Appl. Phys. Lett. 67, 1541-1543 (1995).
  • 33. H. Heinke, V. Kirchner, S. Einfeldt, and D. Hommel, "Analysis of the defect structure of epitaxial GaN", Phys. Stat. Sol. (a) 176, 391-395 (1999).
  • 34. A. M. Roskowski, P. Q. Miraglia, E. A. Preble, S. Einfeldt, and R. F. Davis, "Surface instability and a associated roughness during conventional and pendeo-epitaxial growth of GaN films via MOVPE", accepted for publication.
  • 35. W. K. Burton, N. Cabrera, and F. C. Frank, "The growth of crystals and the equilibrium structure of their surfaces", Philos. Trans. R. Soc. London, Ser. A243, 299 (1951).
  • 36. V. Merlin, T. M. Duc, G. Younes, Y. Monteil, V. Souliere, and P. Regreny, "Misorientation effect on monolayer terrace topography of (100) InP substrates annealed under a Ph3/H2 ambient and homoepitaxial layers grown by metalorganic chemical vapour deposition", J. Appl. Phys. 78 5048-5052 (1995).
  • 37. A. Zauner, J. L. Weyher, M. Plomp, V. Kirilyuk, I. Grzegory, W. J .P. v. Enckevort, J. J. Schermer, P. R. Hageman, and P. K. Larsen, "Homo-epitaxial GaN growth on exact and misorientated single crystals: suppression of hillock formation", J. Cryst. Growth 210, 435-443 (2000).
  • 38. S. Einfeldt, A. M. Roskowski, E. A. Preble, and R. F. Davis, "Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeo-epitaxy", Appl. Phys. Lett. 80, 563-566 (2002)
  • 39. H. Heinke, private communication.
  • 40. C. Kisielowski, J. Kruger, S. Runimov, T. Suski, J. W. Ager III, E. Jones, Z. Liliental-Weber, M. Ruben, E. R. Weber, M. D. Bremser, and R. F. Davis, "Strain-related phenomena in GaN thin films", Phys. Rev. B54, 17745-17753 (1996).
  • 41. U. T. Schwarz, P. J. Schuck, R. D. Grober, A. M. Roskowski, S. Einfeldt, and R. F. Davis, "Micro-Raman and micro-photoluminescence studies of strain relaxation in pendeo GaN on SiC". (to be published)
  • 42. P. Perlin, J. Camassel, W. Knap, T. Taliercio, J. C. Chervin, T. Suski, I. Grzegory, and S. Porowski, "Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN", Appl. Phys. Lett. 67, 2524-2526 (1995).
  • 43. F. Bertram, T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, C. Thomsen, K. Hiramatsu, T. Shibata, and N. Sawaki, "Strain relaxation and strong impuritiy incorporation in epitaxial laterally overgrown GaN: direct imaging of different growth domains by cathodluminescence microscopy and micro-Ramnan spectroscopy", Appl. Phys. Lett. 74, 359-361 (1999).
  • 44. J. W. P. Hsu, M. J. Matthews, D. Abusch-Magder, R. N. Kleiman, D. V. Lang, S. Richter, S. L. Gu, and T. F. Kuech, "Spatial variation of electrical properties in lateral epitaxially overgrown GaN", Appl. Phys. Lett. 79, 761-763 (2001).
  • 45. C. Kirchner, V. Schwegler, F. Eberhard, M. Kamp, K. J. Ebeling, K. Kornitzer, T. Ebner, K. Thonke, R. Sauer, P. Prystawko, M. Leszczynski, I. Grzegory, and S. Porowski, "Homoepitaxial growth of GaN by metalorganic vapour phase epitaxy: A benchmark for GaN technology", Appl. Phys. Lett. 75, 1098-1100 (1999).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA2-0006-0099
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