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Abstrakty
The successful development of both discrete UV photodiodes and large-format UV imaging arrays consisting of 128x128 and 320x256 AlGaN p-i-n photodiodes is reported. Detectors and detector arrays have been succesfully developed to sense radiation in the 300-365 nm visible-blind and 240-285 nm solar-blind portions of the UV spectral region. Details of the device synthesis and processing are discussed, including flip-chip bonding procedures employed to mate the UV photodiode arrays to silicon read - out integrated circuits (ROICs). A selection of UV images obtained using these new large-format UV digital imagers is in included.
Słowa kluczowe
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Czasopismo
Rocznik
Tom
Strony
251--260
Opis fizyczny
Bibliogr. 13 poz.
Twórcy
autor
- Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA
autor
- Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA
autor
- Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA
autor
- Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA
Bibliografia
- 1. See, for example, IR digital cameras that are available from Indigo Systems (http://www.indigosystems.com).
- 2. C. E. Kolb, S. B. Ryali, and J. C. Wormhoudt, "The chemical physics of ultraviolet plume signatures", Proc. SPIE 932, 2 (1988).
- 3. H. Morkoc, "GaN-based modulation-doped FETs and UV detectors", Naval Research Reviews 51(1), 26 (1999).
- 4. D. K. Wickenden, Z. Huang, D. Brent Mott, and P. K. Shu, "Development of gallium nitride photoconductive detectors", Johns Hopkins APL Technical Digest 18(2), 217 (1997).
- 5. W. Yang, T. Novova, S. Krishnankutty, R. Torreano, S. McPherson, and H. Marsh, "Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noise", Appl. Phys. Lett. 73(8), 1086 (1998).
- 6. T. Huang, D. B. Mott, and A. La, "Development of 256x256 ultraviolet imaging arrays", Proc. SPIE 3765, 254 (1999).
- 7. J. D. Brown, J. Matthews, S. Harney, J. Boney, J. F. Schetzina, J. D. Benson, K. V. Dang, T. Nohava, W. Yang, and S. Krishnankutty, "Visible-blind UV digital camera based on a 32x32 array of GaN/AlGaN p-i-n photodiodes", MRS Internet J. Nitride Semicond. Res. 4, 9 (1999).
- 8. J. D. Brown, J. Matthews, S. Harney, J. C. Boney, J. F. Schetzina, J. D. Benson, K.V. Dang, T. Nohava, W. Yang, and S. Krishnankutty, "High-sensitivity visible-blind AlGaN photodiodes and photodiode arrays", MRS Internet J. Nitride Semicond. Res. 5S1, W1.9 (2000).
- 9. J. D. Brown, J. Boney, J. Matthews, P. Srinivasan, J. F. Schetzina, T. Nohava, W. Yang, and S. Krishnankutty, "UV-specific (320-365 nm) digital camera based on a 128x128 focal plane array of GaN/AlGaN p-i-n photodiodes", MRS Internet J. Nitride Semicond. Res. 5, 6 (2000).
- 10. D. Walker, V. Jumar, K. Mi, P. Kung, X. H. Zhang, and M. Razeghi, "Solar-blind AlGaN photodiodes with very low cutoff wavelength", Appl. Phys. Lett. 76, 403 (2000).
- 11. E. L. Tarsa, P. Kozodoy, J. Ibbetson, and B. P. Keller, "Solar-blind AlGaN-based inverted heterostructure photodiodes", Appl. Phys. Lett. 77, 316 (2000).
- 12. S. L. Chuang, Physics of Optoelectronic Devices, Wiley, New York (1995).
- 13. The Book of Photon Tools, pp. 1-25, distributed by Oriel Corporation (http://www.oriel.com).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA2-0006-0098