Codoping of wide gap epitaxial III-Nitride semiconductors

• Autorzy: Korotkov R. Y. , Gregie J. M. , Wessels B. W.
• Języki publikacji: EN

Abstrakty

EN

Codoping in p-type, epitaxial GaN grown by metal-organic vapour phase epitaxy (MOVPE) was investigated. An enhancement of hole concentration was observed experimentally in p-type GaN:Mg codoped with oxygen donors. The hole concentration of GaN:Mg codoped with oxygen increased super-linearly from 8x10¹⁶ to 2x10¹⁸ cm⁻³ upon increasing the oxygen dopant partial pressure. A factor of 3-5 enhancement of hole concentration was measured for a fixed oxygen partial pressure during the growth of p-type GaN:Mg. However, when Si was codoped with GaN:Mg, the hole concentration remained constant. Current experimental results are compared with the existing theory of codoping in GaN.

Słowa kluczowe

EN

GaN; codoping; p-type conductivity

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2002
• Tom: Vol. 10, No. 4
• Strony: 243--249
• Opis fizyczny: Bibliogr. 27 poz.

Twórcy

autor

Korotkov R. Y.

• Northwestern University, Materials Research centre and Materials Science and Engineering Department, Evanston, IL 60208, USA

autor

Gregie J. M.

• Northwestern University, Materials Research centre and Materials Science and Engineering Department, Evanston, IL 60208, USA

autor

Wessels B. W.

• Northwestern University, Materials Research centre and Materials Science and Engineering Department, Evanston, IL 60208, USA

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