HgCdTe infrared detectors

• Autorzy: Norton P.
• Języki publikacji: EN

Abstrakty

EN

HgCdTe infrared detectors have been intensively developed over the past forty years since the first synthesis of this compound semiconductor in 1958. Today, HgCdTe is the most widely used infrared detector material. This paper reviews key developments in the crystal growth and device history of this important technology. Projections and challenges for the continued evolution of this technology are summarized

Słowa kluczowe

EN

HgCdTe single crystals and epitaxial layers; HgCdTe photoconductors and photodiodes; focal plane arrays

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2002
• Tom: Vol. 10, No. 3
• Strony: 159--174
• Opis fizyczny: Bibliogr. 26 poz

Twórcy

autor

Norton P.

• Santa Barbara Research Center, Raytheon Systems Company, 75 Coromar Drive, Goleta, CA 93117, USA,

Bibliografia

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