Inherent and additional limitations of HgCdTe heterojunction photodiodes

• Autorzy: Rutkowski J. , Wenus J.
• Konferencja: The Second School of Photonics in Information Processing ; (7.11-11.11.2000 ; Stare Jabłonki , Poland)
• Języki publikacji: EN

Abstrakty

EN

The performance of P-on-n double-layer heterojunction (DLHJ) HgCdTe photodiodes at temperature of 77 K is presented. The effect of inherent and excess current mechanisms on quantum efficiency and R₀A product is analysed. The diodes with good R₀A operability, high quantum efficiency, and low 1/f noise have been demonstrated at cutoff wavelengths up to 14 mm. The experimental results show that proper surface passivation and low series/ contact resistance are major issues relating to fabrication of HgCdTe detectors with high performance.

Słowa kluczowe

EN

HgCdTe photodiodes; heterostructures; quantum efficiency; R0A product

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2001
• Tom: Vol. 9, No. 3
• Strony: 331--335
• Opis fizyczny: Bibliogr. 9 poz.

Twórcy

autor

Rutkowski J.

autor

Wenus J.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland,