Design and fabrication of GaSb/InGaAsSb/AlGaSb mid-infrared photodetectors

• Autorzy: Piotrowski T. T. , Piotrowska A. , Kamińska E. , Piskorski M. , Papis E. , Gołaszewska K. , Kątcki J. , Ratajczak J. , Adamczewska J. , Wawro A. , Piotrowski J. , Orman Z. , Pawluczyk J. , Nowak Z.
• Konferencja: The Second International Conference on Solid State Crystals '2000 (ICSS'2000) ; (9.10-13.10.2000 ; Zakopane , Poland)
• Języki publikacji: EN

Abstrakty

EN

The paper reports on the design and fabrication of LPE-grown GaSb/n-InxGa₁-xAsySb₁-y/p-AlxGa₁-xAsySb₁-y heterojuction photodetectors operating in the 2-2.4 mm wavelength region. Experiments on LPE growth of high-x-content quaternaries as well as optimisation of device processing has been carried out. LPE growth at T » 530°C enabled obtaining lattice matched heterostructures with 19% indium in the active layer In₀.₁₉Ga₀.₈₁As₀.₁₆Sb₀.₈₄/Al₀.₂₄Ga₀.₇₆As₀.₀₄Sb₀.₉₆ and photodetectors with lc = 2.25 um. By increasing the temperature of epitaxial growth to 590°C In₀.₂₃Ga₀.₇₇As₀.₁₈Sb₀.₈₂/Al₀.₃₀Ga₀.₇₀As₀.₀₃Sb₀.₉₇ heterostructures (with 23% indium content) suitable for photodetectors with lc = 2.35 um have been obtained. Mesa-type photodiodes were fabricated by RIE in CCl₄/H₂ plasma and passivated electrochemically in (NH₄)₂S. These devices are characterised by differential resistance area product up to 400 Wcm² and the detectivity in the range the range 3´1010-2´1011 cmHz¹/²/W, in dependence on the photodiode active area and cut-off wavelength.

Słowa kluczowe

EN

mid-infrared; photodetector; LPE growth; GaSb-based heterostructures; surface passivation

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2001
• Tom: Vol. 9, No. 2
• Strony: 188--194
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Piotrowski T. T.

autor

Piotrowska A.

autor

Kamińska E.

autor

Piskorski M.

autor

Papis E.

autor

Gołaszewska K.

autor

Kątcki J.

autor

Ratajczak J.

autor

Adamczewska J.

autor

Wawro A.

autor

Piotrowski J.

autor

Orman Z.

autor

Pawluczyk J.

autor

Nowak Z.

• Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland,