Strain in epitaxial laterally overgrown structures

• Autorzy: Zytkiewicz Z. R.
• Konferencja: The Second International Conference on Solid State Crystals '2000 (ICSS'2000) ; (9-10.2000 ; Zakopane , Poland)
• Języki publikacji: EN

Abstrakty

EN

X-ray diffraction and synchrotron x-ray topography methods were used to analyse strain in GaAs layers grown on GaAs and Si substrates by epitaxial lateral overgrowth (ELO) from a liquid phase. We show the laterally overgrown parts of ELO stripes adhere to the SiO₂ mask which results in their downwards bending. The procedure was found which allows to control adhesion of the layers to the mask by adjusting the vertical growth rate of the layers. For the case of GaAs ELO layers grown on Si substrates the ELO stripes bend outwards from the mask due to the tensile strain in the GaAs buffer layer. Recent data published on strain in other than GaAs ELO structures are reviewed and compared with our results.

Słowa kluczowe

EN

epitaxial lateral overgrowth; lattice mismatched epitaxial structures; liquid phase epitaxy

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2001
• Tom: Vol. 9, No. 2
• Strony: 142--149
• Opis fizyczny: Bibliogr. 31 poz.

Twórcy

autor

Zytkiewicz Z. R.

• Institute of Physics, Polish Academy of Science, 32/46 Lotników Ave., 02-668 Warsaw, Poland,