UHV plasma enhanced CVD system for preparation of new generation amorphous silicon based efficient solar cells

• Autorzy: Jonas S. , Rava P. , Stapinski T. , Walasek E.
• Języki publikacji: EN

Abstrakty

EN

Plasma enhanced chemical vapour deposition (PECVD) is used in the deposition of various thin films such as amorphous silicon, nitrides, oxides and diamond-like carbon. The authors succeeded in preparation of photovoltaic intrinsic a-Si : H with density of 10¹⁶ cm⁻³ and high photocontuctivity gain. These films are the constituents of homojunction p-i-n solar cells or heterojunction type with silicon-carbon window layer of efficiency over 10%. The microwave plasma chemical vapour deposition (MWCVD) seems to be a promising method for the deposition of passivation layers.

Słowa kluczowe

EN

amorphous silicon; plasma enhanced chemical vapour deposition; microwave plasma chemical vapour deposition; passivation; solar cells

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2001
• Tom: Vol. 9, No. 1
• Strony: 91--95
• Opis fizyczny: Bibliogr. 14 poz.

Twórcy

autor

Jonas S.

autor

Rava P.

autor

Stapinski T.

autor

Walasek E.

• University of Mining and Metallurgy, 30 Mickiewicza Ave., 30-059 Cracow, Poland,