Strained layer SCH SQW InGaAs/GaAs lasers for 980-nm band

• Autorzy: Bugajski M. , Mroziewicz B. , Regiński K. , Muszalski J. , Kubica J. , Zborszczyk M. , Sajewicz P. , Piwoński T. , Jachymek A. , Rutkowski R. , Ochalski T. , Wójcik E. , Kowalczyk E. , Maląg A. , Kozłowska A. , Dobrzański L. , Jagoda A.
• Języki publikacji: EN

Abstrakty

EN

Strained layer InGaAsIGaAs SCH SQW (separate confinement heterostructure single quantum well) lasers were grown by a molecularbeam epitaxy (MBE). Highly reliable CW (continuous wave) 98O-nm. broad contact, pump lasers were fabricated in stripe geometry using Schottky isolation and ridge waveguide construction. Threshold current densities of the order of Jth =280 A/cm² (for the resonator length L = 700 um) and differential efficiency ƞ = 0.40 W/A (41%) from one mirror were obtained. The record wall-plug efficiency for AR/HR coated devices was equal to 54%. Theoretical estimations of above parameters. obtained by numerical modelling of devices were Jth = 210 A/cm² and ƞ = 0.47 W/A from one mirror, respectively. Degradation studies revealed that uncoated and AR/HR coated devices did not show any appreciable degradation after 3000 hr of CW operation at at 35°C heat sink temperature at the constant optical power (50 mW) conditions

Słowa kluczowe

EN

laser diodes; strained-layer semiconductor lasers

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2001
• Tom: Vol. 9, No. 1
• Strony: 35--47
• Opis fizyczny: Bibliogr. 28 poz.

Twórcy

autor

Bugajski M.

autor

Mroziewicz B.

autor

Regiński K.

autor

Muszalski J.

autor

Kubica J.

autor

Zborszczyk M.

autor

Sajewicz P.

autor

Piwoński T.

autor

Jachymek A.

autor

Rutkowski R.

autor

Ochalski T.

autor

Wójcik E.

autor

Kowalczyk E.

autor

Maląg A.

autor

Kozłowska A.

autor

Dobrzański L.

autor

Jagoda A.

• Institute of Electron Technology, 32/34 Lotników Ave, 02-668 Warsaw, Poland,