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A new approach to the theory of excess current carrier distribution in the homogeneous base region of the semiconductor multi-junction structure is proposed. Numerical analysis of this structure is performed taking into consideration an assumption that concentrations of excess electrons and holes in the semiconductor are equal (the neutrality principle). To obtain excess carrier distributions in this structure it is necessary to solve continuity equations of electron J n and hole J p current densities. A general solution is obtained and numerically calculated distributions of excess carriers and electrical potential for cases interesting from the point of view of their application in injection modulated thermal radiation structures destined for dynamic scene projectors are presented.
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1--8
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Bibliogr. 9 poz., wykr.
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- Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland
autor
- Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland
autor
- Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland
autor
- Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland
Bibliografia
- 1. l. L. SOSNOWSKI, Excess-Defect Semiconductor Contacts, Phys. Rev., 1947, 72, 461-462.
- 2. L. SOSNOWSKI, B. W. SOOLE, S. STARKIEWICZ, Occurrence of Random Photo-Voltaic Barriers in Photo-Conductive Layers, 1947, Nature, 160, 471-472.
- 3. W. SHOCKLEY, The theory of p-n Junctions in Semiconductors and p-n Junction Transistors, BSTJ, 1948, 28, 435.
- 4. W. VAN ROOSBROECK, The Transport of Added Current Carriers in a Homogeneous Semiconductor, Phys. Rev., 1955, 91, 282.
- 5. V. K. MALYUTENKO, A. MELNIK, O. MALYUTENKO, High Temperature (T > 300 K) Light Emitting Diodes for 8-12 µm Spectral Range, Infrared Phys. & Technol., 2000, 41, 373.
- 6. V. K. MALYUTENKO, V. V. BOGATYRENKO, O. YU. MALYUTENKO, D. R. SNYDER, A. HUBER A., J. NORMAN, Semiconductor Screen Dynamic Visible to Infrared Scene Converter, Proc. SPIE, 2002, 4818, 147-156.
- 7. V. K. MALYUTENKO, S. S. BOLGOV, O. YU. MALYUTENKO, Un-Cooled Infrared (8-12 µm) Emitters of Positive and Negative Contrast, Infrared Phys. & Technol., 2004, 45, 217-222.
- 8. V. K. MALYUTENKO, K. V. MICHAILOVSKAYA, O. YU. MALYUTENKO, V. V. BOGATYRENKO, R. R. SNYDER, Infrared Dynamic Scene Simulating Device Based on Light Down-Conversion, IEE Proc. - Optoelectron. 2003, 150, 391-394.
- 9. R. A. SMITH, Semiconductors, Cambridge University Press, 1978.
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Bibliografia
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bwmeta1.element.baztech-article-BWA1-0028-0046