Excess current carrier distribution in the base region of the semiconductor multi-junction structure

• Autorzy: Sikorski S. , Pultorak J. , Jung W. , Piotrowski T.
• Języki publikacji: EN

Abstrakty

EN

A new approach to the theory of excess current carrier distribution in the homogeneous base region of the semiconductor multi-junction structure is proposed. Numerical analysis of this structure is performed taking into consideration an assumption that concentrations of excess electrons and holes in the semiconductor are equal (the neutrality principle). To obtain excess carrier distributions in this structure it is necessary to solve continuity equations of electron J _n and hole J _p current densities. A general solution is obtained and numerically calculated distributions of excess carriers and electrical potential for cases interesting from the point of view of their application in injection modulated thermal radiation structures destined for dynamic scene projectors are presented.

Słowa kluczowe

EN

semiconductors; numerical modelling; boundary conditions; current distribution; current density

PL

półprzewodniki; modelowanie numeryczne; warunki brzegowe; rozpływ prądów; gęstość prądu

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology : Internet Journal
• Rocznik: 2007
• Tom: Vol. 39, nr 6
• Strony: 1--8
• Opis fizyczny: Bibliogr. 9 poz., wykr.

Twórcy

autor

Sikorski S.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Pultorak J.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Jung W.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Piotrowski T.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

Bibliografia

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• 2. L. SOSNOWSKI, B. W. SOOLE, S. STARKIEWICZ, Occurrence of Random Photo-Voltaic Barriers in Photo-Conductive Layers, 1947, Nature, 160, 471-472.
• 3. W. SHOCKLEY, The theory of p-n Junctions in Semiconductors and p-n Junction Transistors, BSTJ, 1948, 28, 435.
• 4. W. VAN ROOSBROECK, The Transport of Added Current Carriers in a Homogeneous Semiconductor, Phys. Rev., 1955, 91, 282.
• 5. V. K. MALYUTENKO, A. MELNIK, O. MALYUTENKO, High Temperature (T > 300 K) Light Emitting Diodes for 8-12 µm Spectral Range, Infrared Phys. & Technol., 2000, 41, 373.
• 6. V. K. MALYUTENKO, V. V. BOGATYRENKO, O. YU. MALYUTENKO, D. R. SNYDER, A. HUBER A., J. NORMAN, Semiconductor Screen Dynamic Visible to Infrared Scene Converter, Proc. SPIE, 2002, 4818, 147-156.
• 7. V. K. MALYUTENKO, S. S. BOLGOV, O. YU. MALYUTENKO, Un-Cooled Infrared (8-12 µm) Emitters of Positive and Negative Contrast, Infrared Phys. & Technol., 2004, 45, 217-222.
• 8. V. K. MALYUTENKO, K. V. MICHAILOVSKAYA, O. YU. MALYUTENKO, V. V. BOGATYRENKO, R. R. SNYDER, Infrared Dynamic Scene Simulating Device Based on Light Down-Conversion, IEE Proc. - Optoelectron. 2003, 150, 391-394.
• 9. R. A. SMITH, Semiconductors, Cambridge University Press, 1978.