Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

• Autorzy: Zogg H. , Arnold M.
• Konferencja: Infrared Photodetectors (IPH) ; (30-31.08.2005, Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

Narrow spectral band infrared detectors are required for multispectral infrared imaging. Wavelength selectivity can be obtained by placing passive line filters in front of the detectors, or, the preferred choice, by making the detectors themselves wavelength selective. We review the first photovoltaic resonant cavity enhanced detectors (RCED) for the mid-IR range. The lead-chalcogenide (PbEuSe) photodetector is placed as a very thin layer inside an optical cavity. At least one side is terminated with an epitaxial Bragg mirror (consisting of quarter wavelength PbEuSe/BaF2 pairs), while the second mirror may be a metal. Linewidths are as narrow as 37 nm at a peak wavelength of 4400 nm, and peak quantum efficiencies up to above 50% are obtained.

Słowa kluczowe

EN

infrared sensors; resonant cavity; lead-chalcogenides; molecular beam epitaxy; silicon substrates

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2006
• Tom: Vol. 14, No. 1
• Strony: 33--36
• Opis fizyczny: Bibliogr. 13 poz., wykr.

Twórcy

autor

Zogg H.

autor

Arnold M.

• Thin Film Physics Group, Laboratory for Solid Sate Physics, Swiss Federal Institute of Technology (ETH), 1 Technopark Str., CH-8005 Zurich, Switzerland,

Bibliografia

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