InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging

• Autorzy: Rehm R. , Walther M. , Schmitz J. , Fleißner J. , Fuchs F. , Ziegler J. , Cabanski W.
• Konferencja: Infrared Photodetectors (IPH) ; (30-31.08.2005, Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The first fully operational mid-IR (3–5 um) 256x256 IR-FPA camera system based on a type-II InAs/GaSb short-period superlattice showing an excellent noise equivalent temperature difference below 10 mK and a very uniform performance has been realized. We report on the development and fabrication of the detector chip, i.e., epitaxy, processing technology and electro-optical characterization of fully integrated InAs/GaSb superlattice focal plane arrays. While the superlattice design employed for the first demonstrator camera yielded a quantum efficiency around 30%, a superlattice structure grown with a thicker active layer and an optimized V/III BEP ratio during growth of the InAs layers exhibits a significant increase in quantum efficiency. Quantitative responsivity measurements reveal a quantum efficiency of about 60% for InAs/GaSb superlattice focal plane arrays after implementing this design improvement.

Słowa kluczowe

EN

infrared; focal plane array; superlattice; GaSb; thermal imaging

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2006
• Tom: Vol. 14, No. 1
• Strony: 19--24
• Opis fizyczny: Bibliogr. 8 poz., il., wykr.

Twórcy

autor

Rehm R.

autor

Walther M.

autor

Schmitz J.

autor

Fleißner J.

autor

Fuchs F.

autor

Ziegler J.

autor

Cabanski W.

• Fraunhofer-Institut für Angewande Festkörperphysik (IAF), Tullastrasse 72, D-79108 Freiburg, Germany,

Bibliografia

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• 2. J.L. Johnson, L.A. Samoska, A.C. Gossard, J.L. Merz, M.D. Jack, G.H. Chapman, B.A. Baumgratz, K. Kosai, and S.M. Johnson, "Electrical and optical properties of infrared photodiodes using the InAs/Ga1-xInxSb superlattice in heterojunctions with GaSb", J. Appl. Phys. 80, 1116-1127 (1996).
• 3. F. Fuchs, U. Weimer, W. Pletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl, "High performance InAs/Ga1-xInxSb superlattice infrared photodiodes", Appl. Phys. Lett. 71, 3251-3253 (1997).
• 4. I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan, "Band parameters for III-V compound semiconductors and their alloys", J. Appl. Phys. 89, 5815-5875 (2001).
• 5. R. Rehm, M. Walther, F. Fuchs, J. Schmitz, and J. Fleissner, "Passivation of InAs/(GaIn)Sb short-period superlattcie photodiodes with 10 µm cutoff wavelength by epitaxial overgrowth with AlxGa1-xAsySb1-y", Appl. Phys. Lett. 86, 173501-1-173501-3 (2005).
• 6. M. Walther, R. Rehm. F. Fuchs, J. Schmitz, J. Fleißner, W. Cabanski, D. Eich, M. Finck, W. Rode, J. Wendler, R. Wollrab, and J. Ziegler, "256x256 focal plane array midwavelength infrared camera based on InAs/GaSb short-period superlattices", J. Electron. Mater. 34, 722-725 (2005).
• 7. N. Herres, F. Fuchs, J. Schmitz, K.M. Pavlov, J. Wagner, J.D. Ralston, P. Koidl, C. Gadaleta, and G. Scamarcio, "Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices", Phys. Rev. B 53, 15688-15705 (1996).
• 8. R. Rehm, H. Schneider, K. Schwarz, M. Walther, P. Koidl, and G. Weimann, "Responsivity and gain in InGaAs/GaAs-QWIPs and GaAs/AlGaAs-QWIPs: a comparative study", Proc. SPIE 4288, 379-385 (2001).