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Abstrakty
This paper presents a simple two-layer responsivity model of n-HgCdTe photoconductive detectors by including the contribution of shunt resistance arising due to the accumulation layer at the surface. It is shown that in general responsivity of a proper two-layer model is higher than quasi two-layer model that is reported in literature and used by many workers.
Wydawca
Czasopismo
Rocznik
Tom
Strony
213--219
Opis fizyczny
Bibliogr. 9 poz., wykr.
Twórcy
autor
- Solid State Physics Laboratory, Lucknow Road, 110054 Delhi, India
autor
- Solid State Physics Laboratory, Lucknow Road, 110054 Delhi, India
Bibliografia
- 1. R.M. Broudy and V.J. Mazurczyk, in Semiconductors and Semimetals, Vol. 18, pp. 157–99, edited by R.K. Willardson and A.C. Beer, Academic Press, New York, 1981.
- 2. M.B. Reine, K.R. Maschhoff, S.P. Tobin, P.W. Norton, J.A. Mroczkowski, and E.E. Kruger, Semicond. Sci. Technol. 8, 788 (1993).
- 3. R. Pal, R.K. Bhan, K.C. Chhabra, and O.P. Agnihotri, Semicond. Sci. Technol. 11, 231 (1996).
- 4. J.F. Silliquini, K.A. Fynn, B.D. Nener, L. Faraone, and R.A. Hartley, Semicond. Sci. Technol. 9, 1515 (1994).
- 5. J.F. Silliquini and L. Faraone, Semicond. Sci. Technol. 12, 1010 (1997).
- 6. R. Pal, B.L. Sharma, V. Gopal, V. Kumar, and O.P. Agnihotri, IR Phys. and Technology 40, 101 (1999).
- 7. V. Dhar, R.K. Bhan, R. Ashokan, and V. Kumar, Semicond. Sci. Technol. 11, 1302 (1996).
- 8. E.L. Dereniak and D.G. Crowe, Optical Radiation Detectors, John Wiley and Sons, New York, 1984, Ch. 4.
- 9. S.M. Sze, Physics of Semiconductor Devices, John Wiley and Sons, New York, Ch. 7, Sec. 7.2.1., 1981.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA1-0005-0107