IR detection with uncooled focal plane arrays. State-of-the art and trends

• Autorzy: Tissot J. L.
• Konferencja: XVII School of Optoelectronics : Photovoltaics-Solar Cells and Detector ; (17. ; 13.10-17.10.2003 , Kazimierz Dolny, Poland)
• Języki publikacji: EN

Abstrakty

EN

The emergence of uncooled detectors has opened new opportunities for IR detection for both military and commercial applications. Development of such devices involves a lot of trade-offs between the different parameters that define the technological stack. These trade-offs explain the number of different architectures that are under worldwide development. The key factor is to find a high sensitivity and low noise thermometer material compatible with silicon technology in order to achieve high thermal isolation in the smallest area as possible. Ferroelectric thermometer based on hybrid technology and electrical resistive thermometer based (microbolometer) technology are under development. However, ferroelectric material suffers from the difficulty to achieve a high figure of merit from thin film that is needed for monolithic structure development. Besides, the microbolometer technology, well adapted for thin film process, leads to higher performance at the expense of more complex readout integrated circuit design. LETI and ULIS have been chosen from the very beginning to develop first, a monolithic microbolometer technology fully compatible with commercially available CMOS technology and secondly, amorphous silicon based thermometer. This silicon approach has the greatest potential for reducing infrared detector manufacturing cost. After the development of the technology, the transfer to industrial facilities has been performed in a short period of time and the production is now ramping up with ULIS team in new facilities. LETI and ULIS are now working to facilitate the IRFPA integration into equipment in order to address a very large market. Achievement of this goal needs the development of smart sensors with on-chip advanced functions and the decrease in manufacturing cost of IRFPA by decreasing the pixel pitch and simplifying the vacuum package. We present in this paper the new designs for readout circuit and packages that will be used for 384×288 and 160×120 arrays with a pitch of 35 um and advanced results on 35 žm pixel pitch arrays. Thermographic application needs high stable infrared detector with a precise determination of the amount of absorbed infrared flux. Hence, infrared detector with internal temperature stabilized shield has been developed and characterised. The results will be presented.

Słowa kluczowe

EN

amorphous silicon; microbolometr; focal plane arrays; NETD

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2004
• Tom: Vol. 12, No. 1
• Strony: 105--109
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Tissot J. L.

• ULIS, BP2, 38113 Veurey Voroize, France,

Bibliografia

• 1. D. Murphy, M. Ray, R. Wyles, J. Asbrock, N. Lum, J. Wyles, C. Hewitt, A. Kennedy, D. Van Lue, J. Anderson, D. Bradley, R. Chin, and T. Kostrzewa, “High sensitivity 25 µm microbolometer FPAs”, Proc. SPIE 4721, 99–110 (2002).
• 2. P.E. Howard, J.E. Clarke, A.C. Ionescu, C. Li, and J.C. Stevens, “DRS U6000 640×480 Vox uncooled IR focal plane”, Proc. SPIE 4721, 48–55 (2002).
• 3. B.S. Backer, N. Butler, M. Kohin, M. Gurnee, J.T. Whitwam, and T. Breen, “Recent improvements and developments in uncooled systems at BAE SYSTEMS North America”, Proc. SPIE 4721, 83–90 (2002).
• 4. C.M. Hanson and H.R. Beratan, “Thin-film ferroelectrics: breakthrough”, Proc. SPIE 4721, 91–98 (2002).
• 5. United State Patent No 5,367,167, Nov. 22,1994.
• 6. T.D. Pope, H. Jerominek, C. Alain, C. Cayer, B. Tremblay, C. Grenier, P.A. Topart, S. LeClair, F. Picard, C. Larouche, B. Boulager, A. Martel, and Y. Desroches, “Commercial and custom 160×120, 251×l and 512×3 pixel bolometric FPAs”, Proc. SPIE 4721, 64–74 (2002).
• 7. C. Yedel, J.L. Martin, J.L. Ouvrier-Buffet, J.L. Tissot, M. Yilain, and J.J. Yon, “Amorphous silicon based uncooled microbolometer IRFPA”, Proc. SPIE 3698.
• 8. E. Mottin, A. Bain, J.L. Martin, J.L. Ouvrier-Buffet, J.J. Yon, J.P. Chatard, and J.L. Tissot, “Uncooled amorphous silicon technology: high performance achievement and future trends” Proc. SPIE 4721 56–63 (2002).
• 9. E. Mottin, J.L. Tissot, and L. Letellier, Proc. AMAA 2003 Conference. (to be published).
• 10. E. Mottin, J.L. Martin, J.L. Ouvrier-Buffet, M. Yilain, A. Bain, J.J. Yon, J.L. Tissot, and J.P. Chatard, “Enhanced amorphous silicon technology for 320×240 microbolometer arrays with a pitch of 35 µm”, Proc. SPIE 4369, 250–256 (2001).