Design and properties of silicon avalanche photodiodes

• Autorzy: Węgrzecka I. , Węgrzecki M. , Grynglas M. , Bar J. , Uszyński A. , Grodecki R. , Grabiec P. , Krzemiński S. , Budzyński T.
• Konferencja: XVII School of Optoelectronics : Photovoltaics-Solar Cells and Detector ; (17. ; 13.10-17.10.2003 , Kazimierz Dolny, Poland)
• Języki publikacji: EN

Abstrakty

EN

A family of silicon avalanche photodiodes with an n⁺-p -π-p⁺ epiplanar structure was developed at the Institute of Electron Technology (ITE). The diameters of photosensitive area range from 0.3 mm to 5 mm. These photodiodes are optimised for detection of 800–850 nm radiation and in that range achieve excellent parameters – high gain, low noise, high detectivity. The detailed research on their spectral dependencies of the gain and noise parameters has revealed that their range of operating is considerable wider and stretches from 550 to 1000 nm. The principles of operation and design considerations concerning avalanche photodiodes are outlined in this paper. Next, the design, technology and properties of silicon avalanche photodiodes developed at the ITE are discussed. Avalanche photodiodes are widely used in detection of very weak and very fast optical signals. Presently in the world, the studies are carried out on applying the avalanche photodiodes in detection of X radiation and in the scintillation detection of nuclear radiation.

Słowa kluczowe

EN

silicon avalanche photodiode; silicon photodiode; photodetector

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2004
• Tom: Vol. 12, No. 1
• Strony: 95--104
• Opis fizyczny: Bibliogr. 8 poz.

Twórcy

autor

Węgrzecka I.

• Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland

autor

Węgrzecki M.

• Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland

autor

Grynglas M.

• Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland

autor

Bar J.

• Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland

autor

Uszyński A.

• Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland

autor

Grodecki R.

• Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland

autor

Grabiec P.

• Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland

autor

Krzemiński S.

• Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland

autor

Budzyński T.

• Institute of Electron Technology, 32/46 Lotników Ave., 02-668 Warsaw, Poland

Bibliografia

• 1. F. Capasso, “Physics of avalanche photodiodes”, in Semiconductors and Semimetals, Vol. 22, pp. 2–173, edited by W.T. Tsang, Academic Press, New York, 1985.
• 2. T. Kaneda, “Silicon and germanium avalanche photodiodes”, in Semiconductors and Semimetals, Vol. 22, pp. 247–328, edited by W.T. Tsang, Academic Press, New York, 1985.
• 3. J.R. McIntyre, “Multiplication noise in uniform avalanche diodes”, IEEE Trans. Electron Devices ED–13, 164 (1966).
• 4. I. Węgrzecka and M. Wêgrzecki, “The properties of ITEe’s silicon avalanche photodiodes within the spectral range used in scintillation detection”, Nucl. Instr. & Met. in Phys. Res. A426, 212–215 (1999).
• 5. I. Węgrzecka, M. Grynglas, M. Węgrzecki, J. Bar, and R. Grodecki, “Temperature characteristics of silicon avalanche photodiodes”, Proc. SPIE 4516, 194–201 (2001).
• 6. I. Węgrzecka, M. Grynglas, and M. Węgrzecki, “Spectral dependence of the main parameters of silicon avalanche photodiodes”, Proc. SPIE 4516, 187–193 (2001).
• 7. J. Bar, E. Dobosz, I. Węgrzecka, and M. Węgrzecki, “Design and technology of a scintillating fibre sensor with silicon avalanche photodiode”, Proc. SPIE 4516, 214–217 (2001).
• 8. M. Moszynski, M. Kapusta, M. Balcerzyk, M. Szawlowski, D. Wolski, I. Węgrzecka, and M. Węgrzecki, “Comparative study of avalanche photodiodes with different structures in scintillation detection”, IEEE 48, 1205–1210 (2001).