Influence of junction parameters on the open circuit voltage decay in solar cells

• Autorzy: Salach-Bielecki R. , Pisarkiewicz T. , Stapiński T. , Wójcik P.
• Konferencja: XVII School of Optoelectronics : Photovoltaics-Solar Cells and Detector ; (17. ; 13.10-17.10.2003 , Kazimierz Dolny, Poland)
• Języki publikacji: EN

Abstrakty

EN

Starting from the general equivalent model of a solar cell including junction capacitance and shunt resistance connected with surface recombination of photocarriers, the phenomenon of open circuit voltage decay was analysed. The time decay of a photovoltage is influenced by the junction capacitance time constant to a great extent. The time constants of both depletion layer and diffusion capacitances varying with applied bias voltage were examined. The detailed analysis of these time constants allowed for evaluation of the forward bias voltage that should be applied to c-Si solar cell to minimize this detrimental effect. As it was shown, that voltage bias can be easily generated by the constant illumination, the so-called bias light. Impedance measurements of solar cells in the frequency range 10 Hz–100 kHz and with varying voltage bias allowed for additional characterisation of the junction capacitance and resistance. The measured parameters agree well with these used in model calculation of a photovoltage decay.

Słowa kluczowe

EN

junction capacitance; open circuit voltage decay; solar cell

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2004
• Tom: Vol. 12, No. 1
• Strony: 79--85
• Opis fizyczny: Bibliogr. 9 poz.

Twórcy

autor

Salach-Bielecki R.

• Department of Electronics, AGH-University of Science and Technology, 30 Mickiewicza Ave., 30-059 Cracow, Poland

autor

Pisarkiewicz T.

• Department of Electronics, AGH-University of Science and Technology, 30 Mickiewicza Ave., 30-059 Cracow, Poland

autor

Stapiński T.

• Department of Electronics, AGH-University of Science and Technology, 30 Mickiewicza Ave., 30-059 Cracow, Poland

autor

Wójcik P.

• Department of Electronics, AGH-University of Science and Technology, 30 Mickiewicza Ave., 30-059 Cracow, Poland

Bibliografia

• 1. M.A. Green, “Minority carrier lifetimes using compensated differential open circuit voltage decay”, Solid-State Electronics 26, 1117–1122 (1983).
• 2. S.M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.
• 3. G. Friesen and H.A. Ossenbrink, “Capacitance effects in high-efficiency cells”, Solar Energy Mater. Solar Cells 48, 77–83 (1997).
• 4. M. Lipiński and P. Panek, “Optimisation of multicrystalline silicon solar cell”, 27th Int. Conf. and Exhibition IMAPS–Poland, 16-19 Sept., Podlesice-Gliwice, 312–315 (2003).
• 5. B. Bitnar, R. Glatthaar, C. Marckmann, M. Spiegel, R. Tölle, P. Fath, G. Willeke and E. Bucher, “Lifetime investigations on screenprinted silicon solar cells”, 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, 6-10 July, Vienna, Austria, 1362–1365 (1998).
• 6. P. Wójcik, T. Pisarkiewicz, and T. Stapiński, “Photoconductivity decay in thin film solar cell structures”, Europ. Microelectronis Packaging and Interconnection Symp. Proc., Cracow, 16–18 June, 350–352 (2002).
• 7. P. Wójcik, T. Stapinski, and T. Pisarkiewicz, “Materials for solar cells studied by photoconductivity methods”, Proc. International Conf. PV in Europe, Rome, 7-11 Oct., 194–197 (2002).
• 8. S.R. Dharival, L.S. Kothari, and S.C. Jain, “Transients in p-n junction solar cells”, J. Phys. D9, 631–641 (1976).
• 9. L.A. Verhoef, J.C. Stroom, F.J. Bisschop, J.R. Liefting, and W.C. Sinke, “3D-resolved determination of minority-carrier lifetime in planar silicon solar cells by photocurrent decay”, J. Appl. Phys. 68, 6485–6494 (1990).