ZnO thin films prepared by high pressure magnetron sputtering

• Autorzy: Czternastek H.
• Konferencja: XVII School of Optoelectronics : Photovoltaics-Solar Cells and Detector ; (17. ; 13.10-17.10.2003 , Kazimierz Dolny, Poland)
• Języki publikacji: EN

Abstrakty

EN

Undoped and Al-doped ZnO films were prepared by a high pressure dc magnetron sputtering technique on glass substrates at a temperature of 470 K. Plasma-emission monitoring was used to stabilize oxygen flow to the deposition chamber. The effect of the total pressure during deposition and doping level on the structural, electrical and optical properties of the films was investigated. No preferred orientation was observed in the case of films prepared at low pressures. ZnO films deposited at a total pressures above 5 Pa and with a doping level up to 3 at.% Al had highly oriented crystallites with a c-axis normal to the substrate. These films with the electrical resistivity of 2×10⁻³ Ω cm and the rms roughness of about 20 nm exhibited an average transmission of 81% over the visible range. At higher doping levels the preferred orientation gradually disappeared, the carrier concentration increased by a small amount, but the Hall mobility decreased drastically because of the ionised impurity scattering and the lack of oriented growth.

Słowa kluczowe

EN

Al-doped zinc oxide; reactive magnetron sputtering; transparent electrodes

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2004
• Tom: Vol. 12, No. 1
• Strony: 49--52
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Czternastek H.

• Institute of Electronics, AGH-University of Science and Technology, 30 Mickiewicza Ave., 30-059 Cracow, Poland,

Bibliografia

• 1. A.B. Djurisic, “Progress in the room-temperature optical functions of semiconductors”, Mater. Sci. & Eng. B38, 237–293 (2002).
• 2. H. Czternastek, M. Jachimowski, “Aluminium-doped ZnO films prepared by dc reactive magnetron sputtering", Proc. of 19-th Conference of ISHM Poland, Porąbka-Kozubnik, 75–78 (1995).
• 3. R. Das, S. Ray, “Zinc oxide-a transparent conducting IR-reflector prepared by rf magnetron sputtering", J. Phys. D: Appl. Phys. 36, 152–155 (2003).
• 4. J.C. Lee et al., “RF-sputter deposition of the high-quality intrisic and n-type ZnO window layers for Cu(In,Ga)Se2 based solar cell applications", Solar Energy Mater. & Solar Cells 64, 185–195 (2000).
• 5. A. Shimizu, S. Chaisitsak, T. Sugiyama, A. Yamada, M. Konagai, “Zinc oxide-based buffer layer in the Cu(In,Ga)Se2 thin film solar cells", Thin Solid Films 361–362, 193–197 (2002).
• 6. S. Bose, A. Bama, “The role of ZnO:Al films in the performance of amorphous-silicon based tandem solar cells", J. Phys. D: Appl. Phys. 32, 213–218 (1999).
• 7. S. Ray, R. Das, A.K. Bama, “Performance of double junction a-Si solar cells by using ZnO:Al films with different electrical and optical properties at the n/metal interface”, Solar Energy Mater. & Solar Cells 74, 387–392 (2002).
• 8. A.G. Spencer, R.P. Howson, R.W. Lewin, “Pressure stability in reactive magnetron sputtering”, Thin Solid Films 158, 141–149 (1988).
• 9. U. Heisig et al., “Deposition of hard wear-resistant coatings by reactive dc plasmatron sputtering”, Thin Solid Films 118, 255–270 (1984).
• 10. A. Brudnik, H. Czternastek, K. Zakrzewska, M. Jachimowski, “Plasma-emission-controlled dc magnetron sputtering of TiO2–x thin films”, Thin Solid Films 199, 45–58 (1991).