InNAs : a new optoelectronic material for mid-infrared applications

• Autorzy: Osiński M.
• Języki publikacji: EN

Abstrakty

EN

The InNx As1-x alloy is a very promissing, although so far almost completely unexplored, novel material for mid-IR emitters and detectors. InNAs/GaAs multiple quantum wells were grown by MOCVD on GaAs substrates, using dimenthylhydrazine (DMHy) as nitrogen precursor. The crystalline quality and solid phase composition were evaluated by high-resolution x-ray diffraction. The nitrogen content in InNAs wells was determined to be 18%. The measurements indicate high quality of quantum-well structures. The peak photoluminescence emission wavelengths of ~6.5 um at 30 K and ~7.2 um at 193 K are the longest reported so far for dilute nitride semiconductors.

Słowa kluczowe

EN

InNAs; dilute nitrides; MOCVD; dimethylhydrazine; multiple quantum wells; mid infrared emitter

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2003
• Tom: Vol. 11, No. 4
• Strony: 321--326
• Opis fizyczny: Bibliogr. 17 poz., rys.

Twórcy

autor

Osiński M.

• Centre for High Technology Materials, University of New Mexico, 313 Goddard SE, Albuquerque, New Mexico 87106-4343, USA,

Bibliografia

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