Optical beam injection methods as a tool for analysis of semiconductor structures

• Autorzy: Domaradzki J. , Kaczmarek D.
• Języki publikacji: EN

Abstrakty

EN

Optical beam injection methods, such as an optical beam induced current (OBIC) one, have several advantages. Such methods enable a comprehesive analysis of photocuurent generated at the microregion of a semiconductor material or a device by focused light beam. In the paper, examples of applications of the OBIC method for: i) examination of the silicon p-i-n diodes used in a scanning electron microscope (SEM) as a detector and ii) localization of electrically active regions at the interface of the new transparent oxide semiconductor (TOS)-semiconductor structure have been outlined.

Słowa kluczowe

EN

transparent semiconductoring oxide; heterojunction; PIN diode; optical beam; inducted current

PL

wiązki laserowe; heterozłącze; prąd indukowany

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 1
• Strony: 129--137
• Opis fizyczny: Bibliogr. 17 poz., rys., wykr.

Twórcy

autor

Domaradzki J.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Kaczmarek D.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

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