Properties of metal-semiconductor-metal and Schottky barrier GaN detectors

• Autorzy: Dobrzański L. , Jagoda A. , Gora K. , Przyborowska K.
• Języki publikacji: EN

Abstrakty

EN

We report on development of MSM and Schottky barrier visible blind detectors on gallium nitride which exhibit responsivities of 0.5 A/W and 0.1 A/W respectively. GaN band edge absorption occurs at 365 nm and naturally provides "visible blindness" of devices. The fabricated Schottky barrier devices exhibit flat spectral response for the UV light. Typical dark current of detectors is 1 nA per square millimetre. The estimated detectivity and noise equivalent power of our devices are close to the best reported elsewhere.

Słowa kluczowe

EN

GaN; visible blind photodetector

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2002
• Tom: Vol. 10, No. 4
• Strony: 291--293
• Opis fizyczny: Bibliogr. 5 poz.

Twórcy

autor

Dobrzański L.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Jagoda A.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Gora K.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Przyborowska K.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

Bibliografia

• 1. E. Monroy, F. Calle, J. L. Pau, E. Munoz, and F. Omnes, "Low noise metal-insulator-semiconductor UV photodiodes based on GaN", Electron. Lett. 36, 2096 (2000).
• 2. D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X. H. Zhang, and M. Razeghi, "Solar blind AlGaN photodiodes with very low cutoff wavelength", Appl. Phys. Lett. 76, 403 (2000).
• 3. Ting Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, "Low-noise back-illuminated AlxGa1-xN-based p-i-n solar-blind ultraviolet photodetector", IEEE J. Quant. Electron. 37, 538 (2001).
• 4. V. V. Kuryatkov, H. Temkin, J. C. Campbell, and R. D. Dupuis, "Low noise photodetectors based on heterojunctions of AlGaN-GaN", Appl. Phys. Lett. 78, 3340 (2001).
• 5. B. Yang, K. Heng, T. Li, C. J. Collins, S. Wang, R. D. Dupuis, J. C. Campbell, M. J. Schurmann, and I. T. Ferguson, "32x32 Ultraviolet A10.1Ga0.9N/GaN p-i-n photodetector array", IEEE J. Quant. Electron. 37, 538 (2001).