280 nm UV LEDs grown on HVPE GAN substrates

• Autorzy: Yasan A. , McClintock R. , Mayes K. , Darvish S. R. , Kung P. , Razeghi M. , Molnar R. J.
• Języki publikacji: EN

Abstrakty

EN

We report on the enhancement of optical and electrical properties of 280 nm UV LEDs using low dislocation density HVPE- grown GaN substrate. Compared with the same structure grown on sapphire, these LEDs show ~30% reduction in current - voltage differential resistance, ~15% reduction in turn-on voltage, more than 200% increase in output power slope efficiency and saturation at higher currents. Lower density of defects due to higher material quality and better heat dissipation are believed to be the reason behind these improvements.

Słowa kluczowe

EN

HVPE growth; GaN LEDs

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2002
• Tom: Vol. 10, No. 4
• Strony: 287--289
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Yasan A.

• Centre for Quantum Devices, Department of Electrical & Computer Engineering, Northwestern University, Evanston, IL 60208

autor

McClintock R.

• Centre for Quantum Devices, Department of Electrical & Computer Engineering, Northwestern University, Evanston, IL 60208

autor

Mayes K.

• Centre for Quantum Devices, Department of Electrical & Computer Engineering, Northwestern University, Evanston, IL 60208

autor

Darvish S. R.

• Centre for Quantum Devices, Department of Electrical & Computer Engineering, Northwestern University, Evanston, IL 60208

autor

Kung P.

• Centre for Quantum Devices, Department of Electrical & Computer Engineering, Northwestern University, Evanston, IL 60208

autor

Razeghi M.

• Centre for Quantum Devices, Department of Electrical & Computer Engineering, Northwestern University, Evanston, IL 60208

autor

Molnar R. J.

• MIT Lincoln Lab Technology, Lexington, MA 02420

Bibliografia

• 1. A. Yasan, R. McClintock, K. Mayes, S. R. Darvish, H. Zhang, P. Kung, and M. Razeghi, "Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire", Appl. Phys. Lett. 81, 2151-2153 (2002).
• 2. A. Yasan, R. McClintock, K. Mayes, S. R. Darvish, P. Kung, and M. Razeghi, "Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm", Appl. Phys. Lett. 81, 801-802 (2002).
• 3. J. Han, M. H. Crawford, R. J. Shul, J. J. Figiel, M. Banas, L. Zhang, Y. K. Song, H. Zhou, and A. V. Nurmikko, "AlGaN/GaN quantum well ultraviolet light emitting diodes", Appl. Phys. Lett. 73, 1688-1690 (1998).
• 4. T. Nishida, H. Saito, and N. Kobayashi, "Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN", Appl. Phys. Lett. 79, 1261-1262 (2001).
• 5. V. Adivarahan, J. Zhang, A. Chitnis, W. Shuai, J. Sun, R. Pachipulusu, M. Shatalov, and M. Asif Khan, Japanese J. Appl. Phys. Part 2 41, L435-436 (2002).
• 6. The HVPE GaN substrates were prepared in the MIT Lincoln Lab.