Recent advances in gate dielectrics and polarised light emission from GaN

• Autorzy: Pearton S. J. , Abernathy C. R. , Gila B. P. , Onstine A. H. , Overberg M. E. , Thaler G. T. , Jihyun K. , Luo B. , Mehandru R. , Ren F. , Park Y. D.
• Języki publikacji: EN

Abstrakty

EN

Inversion behaviour has been demonstrated in gate-controlled p-GaN diodes using both MgO and Sc₂O₃ gate dielectrics and implanted n⁺ regions to provide a source of inversion charge. The total surface state density was estimated from capacitance-voltage or charge pumping measurements to be in the range 3 - 8 x 10¹² cm² after the implant activation annealing to form the source and drain regions. In addition, Mn doping of GaN during growth by molecular beam epitaxy is found to produce room temperature ferromagnetism under conditions where the material remains single-phase. The layers can be used as injectors of spin-polarised carriers into light-emitting diode structures, with the potential for creating polarised optical output.

Słowa kluczowe

EN

GaN; magnetic semiconductors; gate dielectrics

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2002
• Tom: Vol. 10, No. 4
• Strony: 231--236
• Opis fizyczny: Bibliogr. 44 poz

Twórcy

autor

Pearton S. J.

autor

Abernathy C. R.

autor

Gila B. P.

autor

Onstine A. H.

autor

Overberg M. E.

autor

Thaler G. T.

autor

Jihyun K.

autor

Luo B.

autor

Mehandru R.

autor

Ren F.

autor

Park Y. D.

• Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA,

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