Heteroepitaxial technology for high-efficiency UV light-emitting diode

• Autorzy: Kamiyama S. , Iwaya M. , Amano H. , Akasaki I.
• Języki publikacji: EN

Abstrakty

EN

A high-quality AlGaN layer with a low density of threading dislocations is realised for the use of ultraviolet (UV) light-emitting diodes (LEDs). The new crystal growth method of using a GaN seed crystal with (1122) facets and lateral growth of Al₀.₂₂Ga₀.₇₈N through the low -temperature-deposited AlN interlayer enalbles the overgrown Al₀.₂₂Ga₀.₇₈N to have a low dislocation density of 2 x 10⁷ cm⁻² and be crack-free over the whole wafer. Applying the AlGaN as a base layer in UV-LEDs, high - performance devices with high output powers of more than 0.1 mW under 50 mA drive are demonstrated in a wide range of emission wavelengths from 323 to 363 nm. The highest output power of 1.2 mW at 50 mA driving current is obtained with 363 - nm emission wavelength.

Słowa kluczowe

EN

MOVPE; lattice mismatch; threading dislocation; UV; light-emitting diode

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2002
• Tom: Vol. 10, No. 4
• Strony: 225--230
• Opis fizyczny: Bibliogr. 14 poz

Twórcy

autor

Kamiyama S.

autor

Iwaya M.

autor

Amano H.

autor

Akasaki I.

• Faculty od Science and Technology and Hifht-Tech Research Centre, Meijo University, 1-501 Shiogamauchi, Tempaku-ku, Nagoya 468-8502, Japan,

Bibliografia

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