In search for substrate materials for GaN epitaxy: optical properties of thin films of ZnO grown by atomic layer epitaxy

• Autorzy: Godlewski M. , Szczerbakov A. , Ivanov V. Y. , Ghali M. , Langer R. , Barski A.
• Konferencja: Surface and Thin Film Structures' 1999 (7 ; 15-18.09.1999 ; Kazimierz Dolny, Poland)
• Języki publikacji: EN

Abstrakty

EN

We report successful growth of ZnO thin films by atomic layer epitaxy in the gas flow version. Properties of ZnO epilayers produced by four different ALE-procedures are compared. We further demonstrate the use of these ZnO films as thin buffer layers on top of Si and GaAs substarte materials. It is shown that covering either GaAs or Si substartes with thin ZnO layers makes them useful in the GaN technology. Optical properties of GaN films grown on ZnO buffer layers are discussed. These GaN films show several encouraging properties.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 3
• Strony: 416--420
• Opis fizyczny: Bibliogr. 13 poz.

Twórcy

autor

Godlewski M.

autor

Szczerbakov A.

autor

Ivanov V. Y.

autor

Ghali M.

autor

Langer R.

autor

Barski A.

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland