Technology and characterization of resonant cavity enhanced MSM GaAs photodetectors

• Autorzy: Ściana B. , Radziewicz D. , Zborowska-Lindert I. , Boratyński B. , Czernecki R. , Sitarek P. , Misiewicz J. , Tłaczała M.
• Konferencja: Surface and Thin Film Structures' 1999 (7 ; 15-18.09.1999 ; Kazimierz Dolny, Poland)
• Języki publikacji: EN

Abstrakty

EN

Design, material growth and characterization of high speed resonant cavity enhanced GaAs MSM photodetector for 0.87 µm were performed. The epitaxial structure was grown by Metal Organic Vapour Phase Epitaxy (MOVPE). A GaAs absorption layer was placed inside a Fabry-Perot resonant cavity formed by a 10 apir AlAs/GaAs quarter-wavelength stack Bragg reflector on the substrate side and the natural semiconductor-air interface on the top side. The quality of the Bragg reflector was examined using a high resolution X-ray diffraction and reflectivity measurements. The Ti/Pd/Au multifinger Schottky contacts were patterned using lift-off photolithographic technique. The current responsivity, spectral chracteristics and optical pulse response of the obtained RCE MSM photodetectors were measured.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 3
• Strony: 404--407
• Opis fizyczny: Bibliogr. 5 poz.

Twórcy

autor

Ściana B.

autor

Radziewicz D.

autor

Zborowska-Lindert I.

autor

Boratyński B.

autor

Czernecki R.

autor

Sitarek P.

autor

Misiewicz J.

autor

Tłaczała M.

• Institute of Microsystem Technology Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland