Tytuł artykułu
Identyfikatory
Warianty tytułu
Konferencja
Surface and Thin Film Structures' 1999 (7 ; 15-18.09.1999 ; Kazimierz Dolny, Poland)
Języki publikacji
Abstrakty
The Ga1-xInxAsySb1-y layers were grown on GaSb substrates by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, X--ray high resolution diffractometry, electroprobe microanalysis (EPXMA) and numerical analysis of measured C-V characteristic of Schottky barrier junction Hg--GaInAsSb. The different compositions of Ga1-xInxAsySb1-y compounds lattice matched to GaSb substrates with x value changing from 0.021 to 0.23, were established. Applying of sulfidation technique to the substrate's surface before growth, improved layer's quality n-type layers, with carrier concentration below 3⋅10⁻¹⁵ cm⁻³ have been grown.
Słowa kluczowe
Wydawca
Czasopismo
Rocznik
Tom
Strony
393--399
Opis fizyczny
Bibliogr. 14 poz.
Twórcy
autor
autor
autor
autor
autor
autor
- Institute of Electron Technology, al. Lotników 32/46, Warszawa, Poland
Bibliografia
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA1-0001-1072