Technology and properties of GaInAsSb layers grown on GaSb substrates

• Autorzy: Piskorski M. , Papis E. , Gołaszewska K. , Jung W. , Adamczewska J. , Perchuć L.
• Konferencja: Surface and Thin Film Structures' 1999 (7 ; 15-18.09.1999 ; Kazimierz Dolny, Poland)
• Języki publikacji: EN

Abstrakty

EN

The Ga1-xInxAsySb1-y layers were grown on GaSb substrates by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, X--ray high resolution diffractometry, electroprobe microanalysis (EPXMA) and numerical analysis of measured C-V characteristic of Schottky barrier junction Hg--GaInAsSb. The different compositions of Ga1-xInxAsySb1-y compounds lattice matched to GaSb substrates with x value changing from 0.021 to 0.23, were established. Applying of sulfidation technique to the substrate's surface before growth, improved layer's quality n-type layers, with carrier concentration below 3⋅10⁻¹⁵ cm⁻³ have been grown.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 3
• Strony: 393--399
• Opis fizyczny: Bibliogr. 14 poz.

Twórcy

autor

Piskorski M.

autor

Papis E.

autor

Gołaszewska K.

autor

Jung W.

autor

Adamczewska J.

autor

Perchuć L.

• Institute of Electron Technology, al. Lotników 32/46, Warszawa, Poland