Fabrication of microstructures in thin niobium films by reactive ion etching

• Autorzy: Piotrowska A. , Piotrowski T. T. , Kamińska E. , Szopniewski Z. , Gierłowski P. , Lewandowski S.
• Konferencja: Surface and Thin Film Structures' 1999 (7 ; 15-18.09.1999 ; Kazimierz Dolny, Poland)
• Języki publikacji: EN

Abstrakty

EN

Dry rtching of thin niobium films using CCl₂ F₂ /H₂ plasma has been investigated. The efect of rf power, gas flow ratio, and total pressure on the etching characteristics of Nb was examined with special attetion paid to surface quality, etching rate and etching profiles. The morphology of etched surfaces was examined using both optical Nomarski and scanning electron microscopy; the etch depth was measured on patterned substrates by means of a Tencor Alpha-step profilometer. By adjusting RIE parameters: P = 30 W, CCl₂ F₂/H₂ = 1.12, p= 185 µbar, submicron size features with vertical side walls have been obtained in niobium films.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 3
• Strony: 387--392
• Opis fizyczny: Bibliogr. 13 poz.

Twórcy

autor

Piotrowska A.

autor

Piotrowski T. T.

autor

Kamińska E.

autor

Szopniewski Z.

autor

Gierłowski P.

autor

Lewandowski S.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland