Method of testing relation between the reliability of biopolar transistor and the level of its low frequency noise

• Autorzy: Zaklikiewicz A. M.
• Języki publikacji: EN

Abstrakty

EN

A new method of investigation of the reliability of bipolar transistor was described. 40 low-power, high-frequency BF200 transistors were tested during only 96 hours. The dependence of the reliability on the 1/f noise level was confirmed. In addition, it was found that the avalanche noise level may also be used to predict reliability.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 4
• Strony: 606--610
• Opis fizyczny: Bibliogr. 15 poz.

Twórcy

autor

Zaklikiewicz A. M.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland