Calculations of the stress induced by silicon lattice contraction after baron and phosporus doping

• Autorzy: Iovan S. , Radoi R.
• Języki publikacji: EN

Abstrakty

EN

The aim of this paper is to determine the silicon lattice's contraction index after boron and phosphorus doping. This stress factor was determined theoretically and experimentally from the doped wafers curvature. Both theoretical and experimental results are in agreement with the literature.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 4
• Strony: 597--599
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Iovan S.

autor

Radoi R.

• Romanian National Railway Company "CFR" SA Dinicu Golescu Street, No. 38, sector 1, Bucharest, Romania