Photoluminescence of porous silicon in the light of defects in silicon substrate

• Autorzy: Surma B. , Misiuk A. , Wnuk A. , Brzozowski A.
• Języki publikacji: EN

Abstrakty

EN

Photoluminescence (PL) of porous silicon (PS), prepared from commercial as-grown Czochralski silicon (Cz-Si) with initial oxygen concentration up to 1.1 ⋅10¹⁸ cm⁻³ and from that with intentionally introduced oxygen-related defects, has been investigated. Prior PS preparation, some Cz-Si substrates were pre-annealed/treated at up to 1620 K under hydraostatic pressure in the 10⁵ Pa ÷ 1 GPa range to create the oxygen-related defects. PL intensity is depended on the kind of substrate (wafer) and on the substrate defects. The enhancement of PL intensity has been stated for the PS samples prepared from Cz-Si pre-annealed at (720 ÷ 1220) K - 10⁵ Pa and short-time treated at 1620 K - (10⁷ ÷ 10⁹) Pa. The decreased PL intensity has been observed for the PS samples prepared from the Cz-Si substrate treated (1230 ÷ 1400) K - (10⁷ ÷ 10⁹) Pa. The observed phenomena are related to a comlex effect of oxygen precipitates and dislocations on silicon anodization.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 4
• Strony: 592--596
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Surma B.

autor

Misiuk A.

autor

Wnuk A.

autor

Brzozowski A.

• Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01-919 Warszawa, Poland,