Prediction of I-V characteristics of double-gates SOI MOSFETs with ultrathin semiconductor layer

• Autorzy: Janik T. , Majkusiak B. , Jakubowski A.
• Języki publikacji: EN

Abstrakty

EN

Current-voltage characteristics of the double-gate SOI transistor with ultrathin and undoped semiconductor film are investigated. The charge of channel carriers is calculated with a self-considerent solution of the Schrodinger and Poisson equation system. The obtained charge is introduced into a Pao-Sah-like model of the double-gate SOI transisor to calculate the drain curent. Simulation results show influence of carrier energy quantization and channel overlapping effect on transistor performace.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 4
• Strony: 567--570
• Opis fizyczny: Bibliogr. 12 poz

Twórcy

autor

Janik T.

autor

Majkusiak B.

autor

Jakubowski A.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology ul. Koszykowa 75, 00-662 Warszawa, Poland,