Electrical and structural properties of HgCdTe/Si films obtained by the laser epitaxy

• Autorzy: Plyatsko S. V. , Vergush M. M. , Plyatsko S. K. , Piotrowski T.
• Języki publikacji: EN

Abstrakty

EN

In this paper Investigations of HgCdTe layers are presented. The layers have been grown on silicon substrate by evaportation technique using a modulated infrared, large power laser beam. The investigated parametaers included resistivity, the Hall coefficient and mobility of n-type layers obtained by means of evaportation of a solid source or power tablet. The results of characterization using Auger spectroscopy are also shown together with AFM results.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 4
• Strony: 548--552
• Opis fizyczny: Bibliogr. 12 poz.

Twórcy

autor

Plyatsko S. V.

autor

Vergush M. M.

autor

Plyatsko S. K.

autor

Piotrowski T.

• Institute of Semiconductor Physics, NASU, Prospect Nauki, 45 Kiev, 03028, Ukraine