Optimization of parameters of (hg,Cd)Te n⁺-p photodiodes for 10.6-µm spectral region operati at near-room temperatures

• Autorzy: Niedziela T. , Ciupa R.
• Języki publikacji: EN

Abstrakty

EN

Detection possibilities of (Hg,Cd)Te photodiodes for 10.6-µm spectral region operating at near-room temperatures are assessed. Detection parameters of this type of devices are limited by noises coming from random processes of thermal generation and recombination of carriers. Another limitation is the Johnson-Nyquist noise coming from the parasitic impemdance as well as the noise from the preamplifier. This is particularly important for devices of a large area. It is proved that optimum parameters of photodiodes - such as thickness or doping - for the structure on the substrate with broadened energy bandgap are different than those for the construction with ohmie contacts on its both ends.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 4
• Strony: 542--547
• Opis fizyczny: Bibliogr. 30 poz.

Twórcy

autor

Niedziela T.

autor

Ciupa R.

• Institute of Applied Physics, Military University of Technology ul. Kaliskiego 2, 00-908 Warszawa, Poland