Some comments about carrier concentration in doped (Cd,Hg)Te structures

• Autorzy: Jóźwikowski K. , Niedziela T.
• Języki publikacji: EN

Abstrakty

EN

A simple method for comutation of carrier concentration in doped (Cd,Hg)Te (MCT) structures is proposed. The method is based on the postulate on the existence of dopant bands. The paper is of speculative character since the dopant bands are characterized by two parameters only (the mean energy of the band and the effective density of states). These parameters are taken so as good consistency could be obtained with experimental data comprising a wide range of doping levels for various kinds of dopants.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 4
• Strony: 535--541
• Opis fizyczny: Bibliogr. 25 poz

Twórcy

autor

Jóźwikowski K.

autor

Niedziela T.

• Institute of Applied Physics, Military University of Technology ul. Kaliskiego 2, 00-908 Warszawa, Poland