The influence of disolations on generation-recombination processes in narrow-bandgap semiconductors

• Autorzy: Jóźwikowski K. , Niedziela T.
• Języki publikacji: EN

Abstrakty

EN

A simple model of dislocations as cylindrical regions limited with a surface at which recombination occurs is proposed. It is assumed that both the radius of the dislocation surface and the rate of surface recombination are parameters experimentally determinable. Relations for the rates of carrier recombination and generation depemding on the density of dislocations have been obtained. An iterave scheme for the system of charge-carriers transport equations to analyse photoelectric effects in narrow-bandgap semiconductors of strong inhomogeneities is presented.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 4
• Strony: 518--528
• Opis fizyczny: Bibliogr. 27 poz.

Twórcy

autor

Jóźwikowski K.

autor

Niedziela T.

• Institute of Applied Physics, Military University of Technology ul. Kaliskiego 2, 00-908 Warszawa, Poland