The Soret thermodiffusion currents and the excess carrier thermoinjection effect in semiconductors

• Autorzy: Sikorski S. , Piotrowski T.
• Języki publikacji: EN

Abstrakty

EN

It is demonstrated that the presence of temperature gradied in the sample as the only external force results in excess carrier generation, called thermoinjection effect. It is shown that if the total current flowing through the sample is zero and the carrier liftetime is finite, the temperature gradient is accompanied by both positive and negative concentrations of excess carriers, as well as Fermi level splitting realted to this phenomenon. A set equations and boundary condotions describing the thermoinjection effect is presented. The influence of the surface recombination velocity of measurement electrodes and the value of the bulk lifetime of excess carriers on the shape of quasi-Fermi levels and on the voltage drop across the sample is discussed.

• Wydawca: Institute of Electron Technology
• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 4
• Strony: 506--517
• Opis fizyczny: Bibliogr. 12 poz.

Twórcy

autor

Sikorski S.

autor

Piotrowski T.

• Institute of Electron Technilogy, al. Lotników 32/46, 02-668 Warszawa, Poland